HR1F3P 반도체 회로 부품 판매점
on-chip resistor PNP silicon epitaxial transistor
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 NEC |
DATA SHEET
COMPOUND TRANSISTOR
HR1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• Up to 2A high current drives such as IC outputs and actuators
available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
HR1 SERIES LISTS
Products
Marking
HR1A3M
HR1F3P
HR1L3N
HR1A4,
HR1L2Q
HR1F2Q
HR1A4A
MP
MQ
MR
MS
MT
MU
MX
R1 (KΩ)
1.0
2.2
4.7
10
0.47
0.22
−
R2 (KΩ)
1.0
10
10
10
4.7
2.2
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (Pulse)
IC(pulse) *
Base current (DC)
IB(DC)
Total power dissipation
PT **
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50 %
** When 0.7 mm × 16 cm2 ceramic board is used
Ratings
−60
−60
−10
−1.0
−2.0
−0.02
2.0
150
−55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16184EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
© 21090928
Free Datasheet http://www.datasheet4u.com/
+5$0
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3: ≤ µV GXW\ F\FOH ≤
Conditions
VCB = −60 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.4 A
VCE = −5.0 V, IC = −100 µA
+5)3
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3: ≤ µV GXW\ F\FOH ≤
Conditions
VCB = −60 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.3 A
VCE = –5.0 V, IC = −100 µA
+5/1
(/(&75,&$/ &+$5$&7(5,67,&6 7D °&
Parameter
Symbol
Collector cutoff current
ICBO
DC current gain
hFE1 **
DC current gain
hFE2 **
DC current gain
hFE3 **
Low level output voltage
VOL **
Low level input voltage
VIL **
Input resistance
R1
E-to-B resistance
R2
3: ≤ µV GXW\ F\FOH ≤
Conditions
VCB = −60 V, IE = 0
VCE = −2.0 V, IC = −0.1 A
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VIN = −5.0 V, IC = −0.2 A
VCE = −5.0 V, IC = −100 µA
HR1 SERIES
MIN.
50
100
50
0.7
0.7
TYP.
MAX.
−100
−0.4
−0.3
1.0 1.3
1.0 1.3
Unit
nA
−
−
−
V
V
kΩ
kΩ
MIN.
150
100
50
1.54
7
TYP.
MAX.
−100
−0.3
−0.3
2.2 2.86
10 13
Unit
nA
−
−
−
V
V
kΩ
kΩ
MIN.
150
100
50
3.29
7
TYP.
MAX.
−100
−0.3
−0.3
4.7 6.11
10 13
Unit
nA
−
−
−
V
V
kΩ
kΩ
'DWD 6KHHW '(-9'6
Free Datasheet http://www.datasheet4u.com/
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HR1F3P transistor
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