RN2911AFS 반도체 회로 부품 판매점
(RN2910AFS / RN2911AFS) Transistor Silicon PNP Epitaxial Type
|
|
 Toshiba |
RN2910AFS, RN2911AFS
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN2910AFS, RN2911AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly costs.
• Complementary to the RN1910AFS/RN1911AFS
Equivalent Circuit and Bias Resistor Values
C
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
16
25
34
R1
B
E
1. EMITTER1
(E1)
2. BASE1
(B1)
3. COLLECTOR2 (C2)
4. EMITTER2
(E2)
5. BASE2
(B2)
fS6 6. COLLECTOR1 (C1)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
VCBO
VCEO
VEBO
IC
PC (Note 1)
Tj
Tstg
−50
−50
−5
−80
50
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-1F1D
Weight: 0.001 g (typ.)
Equivalent Circuit (top view)
654
Q1 Q2
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) 1 2 3
may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2910AFS
RN2911AFS
Symbol
ICBO
IEBO
hFE
VCE (sat)
Cob
R1
Test Condition
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 mA
IC = −5 mA, IB = −0.25 mA
VCB = 10 V, IE = 0, f = 1 MHz
⎯
Min
⎯
⎯
120
⎯
⎯
3.76
8
Typ. Max Unit
⎯ −100 nA
⎯ −100 nA
⎯ 400
⎯ −0.15 V
0.9 ⎯ pF
4.7 5.64 kΩ
10 12
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/
RN2910AFS, RN2911AFS
RN2910AFS
-100
IC - VI (ON)
COMMON EMITTER
VCE = -0.2 V
-10
Ta = 100°C
25
-1
-25
RN2910AFS
-10000
IC - VI (OFF)
COMMON EMITTER
VCE = -5 V
-1000
Ta = 100°C
25
-25
-100
-0.1
-0.1
-1 -10
INPUT VOLTAGE VI (ON) (V)
RN2911AFS
-100
IC - VI (ON)
COMMON EMITTER
VCE = -0.2 V
-10
Ta = 100°C
25
-1
-25
-100
-10
-0.2
-0.4 -0.6 -0.8
-1
INPUT VOLTAGE VI (OFF) (V)
RN2911AFS
-10000
IC - VI (OFF)
COMMON EMITTER
VCE = -5 V
-1000
Ta = 100°C
25
-25
-1.2
-100
-0.1
-0.1
-1 -10
INPUT VOLTAGE VI (ON) (V)
-100
-10
-0.2
-0.4 -0.6 -0.8
-1
INPUT VOLTAGE VI (OFF) (V)
-1.2
2 2007-11-01
Free Datasheet http://www.datasheet4u.com/
|
PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Toshiba
( toshiba )
RN2911AFS transistor
데이터시트 다운로드 :
[ RN2911AFS.PDF ]
[ RN2911AFS 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
