2N2907ADCSM 반도체 회로 부품 판매점

DUAL HIGH SPEED/ MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

Seme LAB

SEME LAB MECHANICAL DATA Dimensions in mm (inches) 2N2907ADCSM DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 23 1 A 6 4 5 0.23 (0.009) r ad. 6.22 ± 0.13 (0.245 ± 0.005) A = 1.27 ± 0.13 (0.05 ± 0.005) FEATURES • DUAL SILICON PLANAR EPITAXIAL PNP TRANSISTORS • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS • HIGH SPEED SATURATED SWITCHING LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 PAD 4 – Collector 2 PAD 5 – Emitter 2 PAD 6 – Emitter 1 APPLICATIONS: Hermetically sealed dual surface mount version of the popular 2N2907A for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) PER SIDE VCBO VCEO VEBO IC PD PD Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation Derate above 50°C TOTAL DEVICE –60V –60V –5V 600mA 350mW 2.0mW / °C RqJA RqJC TSTG,Tj Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Storage Temperature, Operating temp range 130°C / W 60°C / W –55 to 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 3/00 SEME LAB 2N2907ADCSM ELECTRICAL CHARACTERISTICS PER SIDE (TC = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. VCEO(sus)* V(BR)CBO* V(BR)EBO* ICEX* Collector – Emitter Sustaining Voltage Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current ICBO* Collector – Base Cut-off Current IBEO Base Cut-off Current VCE(sat)* Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage hFE* DC Current Gain * Pulse test tp = 300ms , d £ 2% IC = 10mA IC = 10mA IE = 10mA VCE = 30V IE = 0 TC = 125°C VCE = 30V IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1mA IC = 10mA IC = 150mA IC = 500mA IC = 0 VBE = 0.5V VCB = 50V VBE = 0.5V IB = 15mA IB = 50mA IB = 15mA IB = 50mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V –60 –60 –5 75 100 100 100 50 Max. 50 0.01 10 50 –0.4 –1.6 –1.3 –2.6 300 Unit V V V nA mA nA V V — DYNAMIC CHARACTERISTICS PER SIDE (TC = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. fT Transition Frequency IC = 50mA VCE = 20V f = 100MHz 200 Cob Output Capacitance VCB = 10V IE = 0 f = 1.0MHz Cib Input Capacitance VBE = 2V IC = 0 f = 1.0MHz Max. 8 30 Unit MHz pF pF SWITCHING CHARACTERISTICS PER SIDE (RESISTIVE LOAD) Parameter Test Conditions (TC = 25°C unless otherwise stated) Min. Typ. Max. Unit ton Turn-on Time td Delay Time tr Rise Time toff Turn-off Time ts Storage Time tf Fall Time VCC = 30V IC = 150mA IB1 = 15mA VCC = 6V IC = 150mA IB1 = IB2 = 15mA 26 45 6.0 10 ns 20 40 70 100 50 80 ns 20 30 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 3/00

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2N2907ADCSM

DUAL HIGH SPEED/ MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS - Seme LAB

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