2N2907ACSM 반도체 회로 부품 판매점

HIGH SPEED/ MEDIUM POWER/ PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

Seme LAB

SEME LAB MECHANICAL DATA Dimensions in mm (inches) 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 0.51 ± 0.10 (0.02 ± 0.004) 3 0.31 (0.012) rad. 21 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.31 (0.012) rad. A = 1.02 ± 0.10 (0.04 ± 0.004) A 1.40 (0.055) max. FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS • HIGH SPEED SATURATED SWITCHING APPLICATIONS: SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector Hermetically sealed surface mount version of the popular 2N2907A for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector - Base Voltage –60V VCEO Collector - Emitter Voltage –60V VEBO Emitter - Base Voltage –5V IC Collector Current 600mA PD Total Device Dissipation 350mW PD Derate above 50°C 2.0mW / °C Rja Thermal Resistance Junction to Ambient 350°C / W Tstg,Tj Storage Temperature, Operating Temp Range –55 to 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.3/00 SEME LAB 2N2907ACSM ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. VCEO(sus)* V(BR)CBO* V(BR)EBO* ICEX* Collector – Emitter Sustaining Voltage Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current ICBO* Collector – Base Cut-off Current IBEO Base Cut-off Current VCE(sat)* Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage hFE* DC Current Gain * Pulse test tp = 300ms , d £ 2% IC = 10mA IC = 10mA IE = 10mA VCE = 30V IE = 0 TC = 125°C VCE = 30V IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1mA IC = 10mA IC = 150mA IC = 500mA IC = 0 VBE = 0.5V VCB = 50V VBE = 0.5V IB = 15mA IB = 50mA IB = 15mA IB = 50mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V –60 –60 –5 75 100 100 100 50 DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. fT Transition Frequency IC = 50mA VCE = 20V f = 100MHz 200 Cob Output Capacitance VCB = 10V IE = 0 f = 1.0MHz Cib Input Capacitance VBE = 2V IC = 0 f = 1.0MHz Typ. Typ. Max. 50 0.01 10 50 –0.4 –1.6 –1.3 –2.6 Unit V V V nA mA nA V V — 300 Max. 8 30 Unit MHz pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. ton Turn-on Time td Delay Time tr Rise Time toff Turn-off Time ts Storage Time tf Fall Time VCC = 30V IC = 150mA IB1 = 15mA VCC = 6V IC = 150mA IB1 = IB2 = 15mA Typ. 26 6.0 20 70 50 20 Max. 45 10 40 100 80 30 Unit ns ns Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.3/00

관련 데이터시트

2N2907ACSM

HIGH SPEED/ MEDIUM POWER/ PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS - Seme LAB

홈페이지

연락처  |  최근 업데이트