DMN2230U 반도체 회로 부품 판매점
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
|
 Diodes |
DMN2230U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Please click here to visit our online spice models database.
Features
Mechanical Data
• Low On-Resistance
• 110 mΩ @ VGS = 4.5V
• 145 mΩ @ VGS = 2.5V
• 230 mΩ @ VGS = 1.8V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 3 and 5)
• Qualified to AEC-Q101 Standards for High Reliability
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
D
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
Characteristic
GS
TOP VIEW
Internal Schematic
Symbol
VDSS
VGSS
ID
IDM
Value
20
±12
2.0
7
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
600
208
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, or minimum recommended pad layout
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
Units
V
V
A
A
Units
mW
°C/W
°C
DMN2230U
Document number: DS31180 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
DMN2230U
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Symbol Min Typ Max Unit
Test Condition
BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 10μA
IDSS
⎯ ⎯ 1 μA VDS = 20V, VGS = 0V
IGSS
⎯ ⎯ ±10 μA VGS = ±12V, VDS = 0V
VGS(th) 0.5 ⎯ 1.0 V VDS = VCS, ID = 250μA
81 110
VGS = 4.5V, ID = 2.5A
RDS (ON) ⎯ 113 145 mΩ VGS = 2.5V, ID = 1.5A
170 230
VGS = 1.8V, ID = 1.0A
|Yfs| ⎯ 5 ⎯ S VDS =5V, ID = 2.4A
VSD ⎯ 0.8 1.1 V VGS = 0V, IS = 1.05A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
⎯ 188 ⎯
⎯ 44 ⎯
⎯ 30 ⎯
⎯8⎯
⎯ 3.8 ⎯
⎯ 19.6 ⎯
⎯ 8.3 ⎯
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
pF
ns VDD = 10V, RL = 10Ω
ID = 1A, VGEN = 4.5V, RG = 6Ω
Notes: 6. Short duration pulse test used to minimize self-heating effect.
10 8
7
8
6
65
4
43
2
2
1
00
0 0.5 1 1.5 2 2.5 3 3.5 4
DMN2230U
Document number: DS31180 Rev. 4 - 2
2 of 4
www.diodes.com
June 2008
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
|
PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Diodes
( diodes )
DMN2230U transistor
데이터시트 다운로드 :
[ DMN2230U.PDF ]
[ DMN2230U 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
DMN2230U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - Diodes
DMN2230U
N-CHANNEL ENHANCEMENT MODE MOSFET - TY Semiconductor
DMN2230UQ
N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes