2SA1890 반도체 회로 부품 판매점
Silicon PNP Epitaxial Transistor
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 Panasonic Semiconductor |
Transistor
2SA1890
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SC5026
s Features
q Low collector to emitter saturation voltage VCE(sat).
q High collector to emitter voltage VCEO.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–80
V
Collector to emitter voltage VCEO
–80
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–1.5 A
Collector current
IC
–1 A
Collector power dissipation (TC=25˚C)
PC*
1
W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
Unit: mm
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1Z
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –40V, IE = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –100mA
VCE = –2V, IC = –500mA*2
IC = –500mA, IB = –50mA*2
IC = –500mA, IB = –50mA*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
Q
R
hFE1 120 ~ 240 170 ~ 340
min typ max Unit
– 0.1 µA
–80 V
–80 V
–5 V
120 340
60
– 0.2 – 0.3
V
– 0.85 –1.2
V
120 MHz
15 30 pF
*2 Pulse measurement
1
Transistor
PC — Ta
1.2
Printed circut board: Copper
foil area of 1cm2 or more, and
1.0 the board thickness of 1.7mm
for the collector portion.
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=–25˚C
25˚C
–75˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
12
IE=0
f=1MHz
Ta=25˚C
10
8
6
4
2
0
1 3 10 30 100 300 1000
Collector to base voltage VCB (V)
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
IC — VCE
Ta=25˚C
IB=–8mA –7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SA1890
–100
–30
–10
–3
–1
– 0.3
– 0.1
VCE(sat) — IC
IC/IB=10
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
hFE — IC
300
VCE=–2V
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
fT — IE
200 VCB=–10V
180 Ta=25˚C
160
140
120
100
80
60
40
20
0
1
3
10 30
100
Emitter current IE (mA)
2
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제조업체: Panasonic Semiconductor
( panasonic )
2SA1890 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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