BTP8550BA3 반도체 회로 부품 판매점
General Purpose PNP Epitaxial Planar Transistor
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 Cystech Electonics |
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C313A3-B
Issued Date : 2004.03.04
Revised Date :
Page No. : 1/4
BTP8550BA3
Description
The BTP8550BA3 is designed for use in output amplifier of portable radios in class B push pull operation.
Features
• Large collector current , IC= -1.5A
• Low VCE(sat)
• Complementary to BTN8050A3.
Symbol
BTP8550BA3
Outline
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
Pd
RθJA
Tj
Tstg
BTP8550BA3
EBC
Limits
-40
-25
-6
-1.5
-0.5
625
200
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
CYStek Product Specification
Free Datasheet http://www.datasheet4u.com/
CYStech Electronics Corp.
Spec. No. : C313A3-B
Issued Date : 2004.03.04
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
-40
-25
-6
-
-
-
-
-
45
85
40
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Classification Of hFE 2
Max.
-
-
-
-100
-100
-0. 5
-1.2
-1
-
500
-
-
20
Unit
V
V
V
nA
nA
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=-100µA
IC=-2mA
IE=-100µA
VCB=-35V
VEB=-6V
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Rank
Range
B
85~160
C
120~200
D
160~320
E
250~500
BTP8550BA3
CYStek Product Specification
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PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Cystech Electonics
( cystech )
BTP8550BA3 transistor
데이터시트 다운로드 :
[ BTP8550BA3.PDF ]
[ BTP8550BA3 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
