BUV26AF 반도체 회로 부품 판매점
Silicon NPN Power Transistors
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 Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 90V(Min)- BUV26F
100V(Min)- BUV26AF
·High Switching Speed
APPLICATIONS
·Designed for fast switching applications such as high
frequency and efficiency converters, switching regulators
and motor control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
VBE= 0
BUV26F
BUV26AF
180
200
V
VCEO
Collector-Emitter Voltage
BUV26F
BUV26AF
90
100
V
VEBO Emitter-Base Voltage
5
www.DataSheet.net/
V
IC Collector Current-Continuous
14 A
ICM Collector Current-Peak
25 A
IBB Base Current-Continuous
4A
IBM Base Current-Peak
Collector Power Dissipation
PC @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
6
18
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
7.0 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 55 ℃/W
isc Product Specification
BUV26F/AF
isc Website：www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUV26F/AF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BUV26F
BUV26AF
IC= 0.2A ;IB=B 0; L= 25mH
90
100
V
VCE(sat)-1
Collector-Emitter
Saturation Voltage
BUV26F IC= 12A; IB= 1.2A
BUV26AF IC= 10A; IB= 1.0A
1.5
V
1.0
VCE(sat)-2
Collector-Emitter
Saturation Voltage
BUV26F IC= 6A; IB=B 0.6A
BUV26AF IC= 5A; IB=B 0.5A
0.6
V
0.5
VBE(sat)-1
Base-Emitter
Saturation Voltage
BUV26F IC= 12A; IB= 1.2A
BUV26AF IC= 10A; IB= 1.0A
2.0
V
1.5
VBE(sat)-2
ICEX
Base-Emitter
Saturation Voltage
BUV26F IC= 6A; IB=B 0.6A
BUV26AF IC= 5A; IB=B 0.5A
Collector Cutoff Current
www.DataSheet.net/
VCE=VCESmax;VBE=-1.5V,TJ=125℃
ICES Collector Cutoff Current
VCE=VCESmax;VBE=0,TJ=125℃
1.2
V
1.2
1.0 mA
3.0 mA
IEBO Emitter Cutoff Current
VEB= 5V; IC=0
1.0 mA
Switching Times; Resistive Load
ton Turn-On Time
tstg Storage Time
tf Fall Time
For BUV26F
IC= 12A; IB1= 1.2A; IB2= -2.4A
For BUV26AF
IC= 10A; IB1= 1.0A; IB2= -2.0A
0.4 0.6
0.45 1.0
0.12 0.25
μs
μs
μs
isc Website：www.iscsemi.cn
2
Datasheet pdf - http://www.DataSheet4U.co.kr/
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( isc )
BUV26AF transistor
데이터시트 다운로드 :
[ BUV26AF.PDF ]
[ BUV26AF 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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Silicon NPN Power Transistors - Inchange Semiconductor