C1318 반도체 회로 부품 판매점
NPN Transistor - 2SC1318
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 Panasonic Semiconductor |
Transistors
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA719 and 2SA720
I Features
• Low collector to emitter saturation voltage VCE(sat)
• Complementary pair with 2SA719 and 2SA720
5.0±0.2
0.7±0.1
Unit: mm
4.0±0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to
base voltage
2SC1317
2SC1318
VCBO
30
60
Collector to
2SC1317
emitter voltage 2SC1318
VCEO
25
50
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
ICP
IC
PC
Tj
Tstg
7
1
500
625
150
−55 to +150
Unit
V
V
V
A
mA
mW
°C
° Cwww.DataSheet.co.kr
0.45+–00..115
(1.27)
(1.27)
0.45+–00..115
123
2.54±0.15
1: Emitter
2: Collector
3: Base
TO-92 Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Collector to
base voltage
2SC1317
2SC1318
ICBO
VCBO
VCB = 20 V, IE = 0
IC = 10 µA, IE = 0
Collector to
emitter voltage
2SC1317
2SC1318
VCEO
IC = 10 mA, IB = 0
Emitter to base voltage
Forward current transfer ratio *1
Collector to emitter saturation voltage *1
Base to emitter saturation voltage *1
Transition frequency
Collector output capacitance
VEBO
hFE1 *2
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IE = 10 µA, IC = 0
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
IC = 300 mA, IB = 30 mA
IC = 300 mA, IB = 30 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1 85 to 170 120 to 240 170 to 340
Min
30
60
25
50
7
85
40
Typ Max
0.1
340
0.35 0.6
1.1 1.5
200
6 15
Unit
µA
V
V
V
V
V
MHz
pF
1
Datasheet pdf - http://www.DataSheet4U.net/
2SC1317, 2SC1318
Transistors
PC Ta
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
VCE(sat) IC
100 IC / IB = 10
30
10
3
1
Ta = 75°C
0.3 25°C
−25°C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
IC VCE
800
Ta = 25°C
700
IB = 10 mA
9 mA
600 8 mA
7 mA
6 mA
500 5 mA
4 mA
400 3 mA
300 2 mA
200 1 mA
100
0
0 2 4 6 8 10 12 14 16 18 20
Collector to emitter voltage VCE (V)
VBE(sat) IC
100 IC / IB = 10
30
10
3
1
0.3
0.1
25°C Ta = 75°C
−25°C
www.DataSheet.co.kr
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT IE
240
VCB = 10 V
Ta = 25°C
200
160
120
80
40
0
−1 −2 −3 −5 −10 −20−30 −50 −100
Emitter current IE (mA)
Cob VCB
12
IE = 0
f = 1 MHz
10 Ta = 25°C
8
6
4
2
0
1 2 3 5 10 20 30 50 100
Collector to base voltage VCB (V)
IC IB
800
VCE = 10 V
700 Ta = 25°C
600
500
400
300
200
100
0
0 1 2 3 4 5 6 7 8 9 10
Base current IB (mA)
hFE IC
300
VCE = 10 V
250
Ta = 75°C
200 25°C
150 −25°C
100
50
0
0.01 0.03 0.1 0.3 1
3
Collector current IC (A)
10
VCER RBE
120
IC = 2 mA
Ta = 25°C
100
80
60
2SC1318
40
2SC1317
20
0
1 3 10 30 100 300 1 000
Base to emitter resistance RBE (kΩ)
2
Datasheet pdf - http://www.DataSheet4U.net/
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제조업체: Panasonic Semiconductor
( panasonic )
C1318 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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전력반도체 문의 : 010-3582-2743
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