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RT3P33M 반도체 회로 부품 판매점

Composite Transistor



Isahaya Electronics 로고
Isahaya Electronics
RT3P33M 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
PRELIMINARY
DESCRIPTION
RT3P33M is a composite transistor built with
RT1P441 chip and RT1P441 chip in SC-88 package.
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
RT3P33M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
OUTLINE DRAWING
2.1
1.25
Unit mm
RTr1
R1
R2
R2
R1
RTr2
TERMINAL
CONNECTOR
EMITTER1
BASE1
COLLECTOR2
EMITTER2
BASE2
:COLLECTOR1
JEITA SC-88
MAXIMUM RATING (Ta=25 )
SYMBOL
VCBO
VEBO
VCEO
IC
ICM
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation Total, Ta=25
Junction temperature
Storage temperature
RATING
-50
-10
-50
-100
-200
150
150
-55 150
UNIT
V
V
V
mA
mA
mW
MARKING
.
ISAHAYA ELECTRONICS CORPORATION
Datasheet pdf - http://www.DataSheet4U.net/


RT3P33M 데이터시트, 핀배열, 회로
a D . www
PRELIMINARY
RT3P33M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25 )
Symbol
V(BR)CEO
ICBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2/R1
fT
Parameter
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
Test conditions
IC=100 A,RBE=
VCB =50V,IE=0
VCE=5V,IC=5mA
IC=10mA,IB=0.5mA
VCE=0.2V,IC=5mA
VCE=5V,IC=100 A
-
-
VCE=-6V,IE=10mA
Limits
Unit
Min Typ Max
-50 -
-V
- - -0.1 A
50 -
--
- -0.1 -0.3 V
- -2.3 -5.0 V
-0.8 -1.1 - V
33 47 61 k
0.9 1.0 1.1 -
- 150 - MHZ
ISAHAYA ELECTRONICS CORPORATION
/ t e n . U 4 t e e h S a t a D . www / / : p t t h
-
f dp
t e e h s a t aD




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RT3P33M transistor

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