파트넘버.co.kr BUV10 데이터시트 PDF


BUV10 반도체 회로 부품 판매점

Silicon NPN Power Transistor



Inchange Semiconductor 로고
Inchange Semiconductor
BUV10 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV10
DESCRIPTION
·High Switching Speed
·High Current Capability
APPLICATIONS
·Designed for high current,high speed,high power applications.
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
VCEX
VCER
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-Peak
IBB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
VALUE UNIT
160 V
160 V
140 V
125 V
7V
25 A
30 A
6A
150 W
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.0 /W
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/


BUV10 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV10
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH
125
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ;IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
ICEO Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= 100V; IB= 0
VCE= 160V;VBE= -1.5V
VCE= 160V;VBE= -1.5V;TC=125
VEB= 5V; IC= 0
1.0 V
2.0 V
1.5 V
1.5 mA
1.5
6.0
mA
0.5 mA
hFE-1
DC Current Gain
IC= 10A ; VCE= 4V
20 60
hFE-2
DC Current Gain
IC= 20A ; VCE= 4V
10
fT Current-Gain—Bandwidth Product IC= 1A; VCE= 15V
8
MHz
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/




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