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Inchange Semiconductor |
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV10
DESCRIPTION
·High Switching Speed
·High Current Capability
APPLICATIONS
·Designed for high current,high speed,high power applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
VCEX
VCER
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-Peak
IBB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
VALUE UNIT
160 V
160 V
140 V
125 V
7V
25 A
30 A
6A
150 W
200 ℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.0 ℃/W
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV10
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH
125
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ;IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
ICEO Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= 100V; IB= 0
VCE= 160V;VBE= -1.5V
VCE= 160V;VBE= -1.5V;TC=125℃
VEB= 5V; IC= 0
1.0 V
2.0 V
1.5 V
1.5 mA
1.5
6.0
mA
0.5 mA
hFE-1
DC Current Gain
IC= 10A ; VCE= 4V
20 60
hFE-2
DC Current Gain
IC= 20A ; VCE= 4V
10
fT Current-Gain—Bandwidth Product IC= 1A; VCE= 15V
8
MHz
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
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