2SB0952A 반도체 회로 부품 판매점
Power Transistors
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 Panasonic Semiconductor |
Power Transistors
2SB0952 (2SB952), 2SB0952A (2SB952A)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For low-voltage switching
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• High-speed switching
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0952 VCBO
2SB0952A
−40
−50
Collector-emitter voltage 2SB0952 VCEO
(Base open)
2SB0952A
−20
−40
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
−5
−7
−12
30
1.3
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0)
1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB0952 VCEO
2SB0952A
IC = −10 mA, IB = 0
−20
−40
V
Collector-base cutoff
current (Emitter open)
2SB0952 ICBO
2SB0952A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
IEBO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
Cob
VCB = −40 V, IE = 0
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = −2 A
IC = −5 A, IB = − 0.16 A
IC = −5 A, IB = − 0.16 A
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
VCB = −10 V, IE = 0, f = 1 MHz
45
60
−50 µA
−50
−50 µA
260
− 0.6 V
−1.5 V
150 MHz
140 MHz
Turn-on time
Storage time
Fall time
ton IC = −2 A
tstg IB1 = −66 mA, IB2 = 66 mA
tf VCC = −20 V
0.1 µs
0.5 µs
0.1 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
hFE2
R
60 to 120
Q
90 to 180
P
130 to 260
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2003
SJD00031AED
1
2SB0952, 2SB0952A
40
(1)
30
PC Ta
(1)TC=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
(PC=1.3W)
20
10
(2)
(3)
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
−6
IB=–60mA
TC=25˚C
−5
–50mA
–45mA
–40mA
−4 –35mA
–30mA
−3 –25mA
–20mA
−2 –15mA
–10mA
−1
–5mA
0
0 −1 −2 −3 −4 −5 −6
Collector-emitter voltage VCE (V)
−10
−1
− 0.1
VCE(sat) IC
IC/IB=30
TC=100˚C
25˚C
–25˚C
− 0.01
− 0.1
−1 −10
Collector current IC (A)
VBE(sat) IC
−10
IC/IB=30
−1 TC=–25˚C
100˚C
25˚C
− 0.1
hFE IC
104
VCE=–2V
103
TC=100˚C
102 –25˚C
25˚C
10
fT IC
104
VCE=–10V
f=10MHz
TC=25˚C
103
102
10
− 0.01
− 0.1
−1 −10
Collector current IC (A)
1
− 0.1
−1
−10 −100
Collector current IC (A)
1
− 0.01
− 0.1
−1
Collector current IC (A)
−10
Cob VCB
104
IE=0
f=1MHz
TC=25˚C
103
102
10
−10
−1
− 0.1
ton, tstg, tf IC
Pulsed tw=1ms
Duty cycle=1%
IC/IB=30
(–IB1=IB2)
VCC=–20V
TC=25˚C
tstg
ton
tf
Safe operation area
−100
Non repetitive pulse
TC=25˚C
ICP
−10
IC
t=10ms
t=1ms
−1 t=300ms
− 0.1
1
− 0.1
−1
−10 −100
Collector-base voltage VCB (V)
− 0.01
0
−2 −4 −6
Collector current IC (A)
−8
− 0.01
− 0.1
−1
−10 −100
Collector-emitter voltage VCE (V)
2 SJD00031AED
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( panasonic )
2SB0952A transistor
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