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Infineon Technologies |
Preliminary data
SPI21N10
SPP21N10,SPB21N10
SIPMOS Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
P-TO262-3-1
dv/dt rated
Product Summary
VDS 100 V
RDS(on) 80 m
ID 21 A
P-TO263-3-2
P-TO220-3-1
Type
SPP21N10
SPB21N10
SPI21N10
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4116
Q67042-S4102
Q67042-S4117
Marking
21N10
21N10
21N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC=25°C
TC=100°C
Pulsed drain currentwww.DataSheet4U.net
TC=25°C
Avalanche energy, single pulse
ID=21 A , VDD=25V, RGS=25
ID
ID puls
EAS
Reverse diode dv/dt
dv/dt
IS=21A, VDS=80V, di/dt=200A/µs, Tjmax =175°C
Gate source voltage
VGS
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Ptot
Tj , Tstg
Value
21
15.0
84
130
6
±20
90
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-31
Preliminary data
SPI21N10
SPP21N10,SPB21N10
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area F)
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- - 1.7 K/W
- - 62
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 100
-
-V
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID = 44 µA
Zero gate voltage drain current
VDS=100V, VGS=0V, Tj=25°C
VDS=100V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS =20V, VDS=0Vwww.DataSheet4U.net
Drain-source on-state resistance
VGS=10V, ID=15.0A
VGS(th)
2.1
3
4
IDSS
IGSS
RDS(on)
µA
- 0.01 1
- 1 100
- 1 100 nA
- 65 80 m
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2002-01-31
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