LMUN5112DW1T1G 반도체 회로 부품 판매점
Dual Bias Resistor Transistors
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 Leshan Radio Company |
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
LMUN5111DW1T1G
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the LMUN5111DW1T1G series, two BRT devices are housed in the SOT–363 package which
is ideal for low–power surface mount applications where board space is at a premium.
. Simplifies Circuit Design
. Reduces Board Space
. Reduces Component Count
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel
. We declare that the material of product compliance with RoHS requirements.
Series
6
5
4
1
2
3
SC-88/SOT-363
Ordering Information
Device
Package
LMUN51XXDW1T1G SC-88
LMUN51XXDW1T3G SC-88
Shipping
3000/Tape&Reel
10000/Tape&Reel
6 54
Q2 R1 R2
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value Unit
Collector-Base Voltage
V CBO –50 Vdc
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
V CEO
IC
–50 Vdc
–100 mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D 187 (Note 1.) mW
256 (Note 2.)
1.5 (Note 1.) mW/°C
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
R θJA
670 (Note 1.)
490 (Note 2.)
°C/W
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T A = 25°C
Derate above 25°C
www.DataSheet4U.com
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Symbol
PD
R θJA
R θJL
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
Unit
mW
mW/°C
°C/W
°C/W
R2
R1
12
Q1
3
MARKING DIAGRAM
6 54
XX
1 23
xx = Device Marking
= (See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
Junction and Storage
Temperature
T J , T stg
–55 to +150
°C
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
1/12
LESHAN RADIO COMPANY, LTD.
LMUN5111DW1T1G Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package Marking R 1(K) R 2(K)
Shipping
LMUN5111DW1T1G
SOT–363
0A
10 10 3000/Tape & Reel
LMUN5112DW1T1G
SOT–363
0B
22 22 3000/Tape & Reel
LMUN5113DW1T1G
SOT–363
0C
47 47 3000/Tape & Reel
LMUN5114DW1T1G
SOT–363
0D
10 47 3000/Tape & Reel
LMUN5115DW1T1G (Note 3.) SOT–363
0E
10
– 3000/Tape & Reel
LMUN5116DW1T1G (Note 3.) SOT–363
0F
4.7 – 3000/Tape & Reel
LMUN5130DW1T1G (Note 3.) SOT–363
0G
1.0 1.0 3000/Tape & Reel
LMUN5131DW1T1G (Note 3.) SOT–363
0H
2.2 2.2 3000/Tape & Reel
LMUN5132DW1T1G (Note 3.) SOT–363
0J
4.7 4.7 3000/Tape & Reel
LMUN5133DW1T1G (Note 3.) SOT–363
0K
4.7 47 3000/Tape & Reel
LMUN5134DW1T1G (Note 3.) SOT–363
0L
22 47 3000/Tape & Reel
LMUN5135DW1T1G (Note 3.) SOT–363
0M
2.2 47 3000/Tape & Reel
LMUN5136DW1T1G (Note 3.) SOT–363
0N
100 100 3000/Tape & Reel
LMUN5137DW1T1G (Note 3.) SOT–363
0P
47 22 3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V CB = –50 V, I E = 0) I CBO – – –100 nAdc
Collector-Emitter Cutoff Current (V CE = –50 V, I B = 0)
Emitter-Base Cutoff Current LMUN5111DW1T1G
I CEO
I EBO
– – –500 nAdc
– – –0.5 mAdc
(V EB = –6.0 V, I C = 0)
LMUN5112DW1T1G
LMUN5113DW1T1G
– – –0.2
– – –0.1
LMUN5114DW1T1G
– – –0.2
LMUN5115DW1T1G
– – –0.9
LMUN5116DW1T1G
– – –1.9
LMUN5130DW1T1G
– – –4.3
LMUN5131DW1T1G
– – –2.3
LMUN5132DW1T1G
– – –1.5
LMUN5133DW1T1G
– – –0.18
LMUN5134DW1T1G
– – –0.13
LMUN5135DW1T1G
– – –0.2
LMUN5136DW1T1G
– – –0.05
LMUN5137DW1T1G
– – –0.13
Collector-Base Breakdown Voltage (I C = –10 µA, I E = 0)
V (BR)CBO
–50
–
– Vdc
Collector-Emitter Breakdown Voltage(Note 4.)(IC = –2.0 mA,I B=0) V (BR)CEO –50
–
– Vdc
www.DataOShNeeCtH4UA.RcoAmCTERISTICS (Note 4.)
Collector-Emitter Saturation Voltage (IC= –10mA,IE= –0.3 mA) V CE(sat)
(I C= –10mA, I B= –5mA) LMUN5130DW1T1G/LMUN5131DW1T1G
(I C= –10mA, IB= –1mA) LMUN5115DW1T1/LMUN5116DW1T1G
LMUN5132DW1T1G/LMUN5133DW1T1G/LMUN5134DW1T1G
–
– –0.25 Vdc
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
2/12
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LMUN5112DW1T1G transistor
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