ZXTC6719MC 반도체 회로 부품 판매점
DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION
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 DIODES |
A Product Line of
Diodes Incorporated
ZXTC6719MC
DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION
Features
• NPN Transistor
• VCEO = 50V
• RSAT = 68 mΩ
• IC = 4A
• PNP Transistor
• VCEO = -40V
• RSAT = 104 mΩ
• IC = -3A
• IC = 4A Continuous Collector Current
• Low Saturation Voltage (100mV max @ 1A -- NPN)
• hFE characterized up to 6A
• Lead, Halogen, and Antimony Free/RoHS Compliant (Note 1)
• “Green” Devices (Note 2)
Mechanical Data
• Case: DFN3020B-8
• Terminals: Pre-Plated NiPdAu leadframe
• Nominal package height: 0.8mm
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Solderable per MIL-STD-202, Method 208
• Weight: 0.013 grams (approximate)
Applications
• DC – DC Converters
• Charging circuits
• Power switches
• Motor control
• CCFL Backlighting circuits
DFN3020B-8
Top View
Device Symbol
Pin Configuration
Ordering Information
Product
ZXTC6719MCTA
Status
Active
Marking
DC3
Reel size (inches)
7
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Tape width (mm)
8
Quantity per reel
3000
Marking Information
www.DataSheet4U.com
DC3 = Product type Marking Code
Dot denotes Pin 1
ZXTC6719MC
Document number: DS31928 Rev. 2 - 2
1 of 9
www.diodes.com
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC6719MC
Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current (a) (f)
Base Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
NPN
PNP
100 -50
50 -40
7.5 -7.5
6 -4
4 -3
1
Unit
V
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation at TA = 25°C (a) (f)
Linear Derating Factor
Power Dissipation at TA = 25°C (b) (f)
Linear Derating Factor
Power Dissipation at TA = 25°C (c) (f)
Linear Derating Factor
Power Dissipation at TA = 25°C (d) (f)
Linear Derating Factor
Power Dissipation at TA = 25°C (d) (g)
Linear Derating Factor
Power Dissipation at TA = 25°C (e) (g)
Linear Derating Factor
Junction to Ambient (a) (f)
Junction to Ambient (b) (f)
Junction to Ambient (c) (f)
Junction to Ambient (d) (f)
Junction to Ambient (d) (g)
Junction to Ambient (e) (g)
Operating and Storage Temperature Range
Symbol
PD
PD
PD
PD
PD
PD
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
TJ, TSTG
Value
1.5
12
2.45
19.6
1
8
1.13
9
1.7
13.6
3
24
83.3
51
125
111
73.5
41.7
-55 to +150
Unit
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C
Notes:
a. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper
area is split down the centre line into two separate areas with one half connected to each half of the dual device.
b. Measured at t <5 secs for a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
c. For a dual device surface mounted on 8 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
d. For a dual device surface mounted on 10 sq cm single sided 1 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
e. For a dual device surface mounted on 85 sq cm single sided 2 oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
f. For a dual device with one active die.
g. For dual device with 2 active die running at equal power.
www.DataSheet4U.com
ZXTC6719MC
Document number: DS31928 Rev. 2 - 2
2 of 9
www.diodes.com
January 2010
© Diodes Incorporated
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ZXTC6719MC transistor
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