MBT3906DW1T1G 반도체 회로 부품 판매점
Dual General Purpose Transistor
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 ON Semiconductor |
MBT3906DW1T1G
Dual General Purpose
Transistor
The MBT3906DW1T1G device is a spin−off of our popular
SOT−23/SOT−323 three−leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO −40 Vdc
Collector −Base Voltage
VCBO −40 Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−200
mAdc
Electrostatic Discharge
ESD
HBM Class 2
MM Class B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Package Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
PD
RqJA
150 mW
833 °C/W
Junction and Storage
Temperature Range
TJ, Tstg − 55 to +150
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
http://onsemi.com
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
1
SOT−363/SC−88
CASE 419B
STYLE 1
MARKING DIAGRAM
6
A2 M G
G
1
A2 = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBT3906DW1T1G SOT−363
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 3
www.DataSheet.in
1
Publication Order Number:
MBT3906DW1T1/D
MBT3906DW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(VCC = −3.0 Vdc, VBE = 0.5 Vdc)
Rise Time
(IC = −10 mAdc, IB1 = −1.0 mAdc)
Storage Time
(VCC = −3.0 Vdc, IC = −10 mAdc)
Fall Time
(IB1 = IB2 = −1.0 mAdc)
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
Symbol
Min Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
−40 −
−40 −
−5.0 −
− −50
− −50
Vdc
Vdc
Vdc
nAdc
nAdc
hFE
VCE(sat)
VBE(sat)
60 −
80 −
100 300
60 −
30 −
− −0.25
− −0.4
−0.65
−
−0.85
−0.95
−
Vdc
Vdc
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
250 − MHz
− 4.5 pF
− 10.0 pF
2.0 12
kW
0.1 10 X 10− 4
100 400
−
3.0 60 mmhos
− 4.0 dB
td
− 35
ns
tr − 35
ts
− 225
ns
tf − 75
www.DataSheet.in
http://onsemi.com
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MBT3906DW1T1G transistor
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전화번호 : 051-319-2877
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