MRF8S26120HR3 반도체 회로 부품 판매점
RF Power Field Effect Transistor
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 Motorola Semiconductors |
Freescale Semiconductor
Technical Data
Document Number: MRF8S26120H
www.DRaetavS.he0e,t46U/.2co0m10
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IBDaQn=dw9i0d0thm=A3,.P84ouMt =H2z,8InWpautttsSAigvnga.l,
IQ Magnitude
PAR = 7.5 dB
Clipping,
@ 0.01%
Channel
Probability
on CCDF.
Frequency
Gps
(dB)
ηD Output PAR ACPR
(%)
(dB)
(dBc)
2620 MHz
2655 MHz
2690 MHz
15.5
15.5
15.6
31.5
31.1
31.1
6.3 --38.0
6.3 --37.3
6.2 --36.7
MRF8S26120HR3
MRF8S26120HSR3
2620--2690 MHz, 28 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 135 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 110 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465--06, STYLE 1
NI--780
MRF8S26120HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S26120HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
CW Operation @ TC = 25°C
Derate above 25°C
VDSS
VGS
VDD
Tstg
TC
TJ
CW
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
141
0.78
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 72°C, 28 W CW, 28 Vdc, IDQ = 900 mA, 2690 MHz
Case Temperature 85°C, 110 W CW(4), 28 Vdc, IDQ = 900 mA, 2690 MHz
RθJC
0.53
0.47
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S26120HR3 MRF8S26120HSR3
1
Table 3. ESD Protection Characteristics
www.DataSheet4U.com
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10 μAdc
IDSS
—
—
1 μAdc
IGSS
—
—
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 172 μAdc)
VGS(th)
1.2
2.0
2.7 Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 900 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.6
3.0 Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.7 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 28 W Avg., f = 2690 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps 14.5 15.6 17.5 dB
Drain Efficiency
ηD 28.0 31.1 —
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR 5.7 6.2 — dB
Adjacent Channel Power Ratio
ACPR
—
--36.7
--34.5
dBc
Input Return Loss
IRL — --14 --9 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 28 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD Output PAR ACPR IRL
(%)
(dB)
(dBc)
(dB)
2620 MHz
15.5 31.5
6.3
--38.0
--13
2655 MHz
15.5 31.1
6.3
--37.3
--14
2690 MHz
15.6 31.1
6.2
--36.7
--14
1. Part internally matched both on input and output.
(continued)
MRF8S26120HR3 MRF8S26120HSR3
2
RF Device Data
Freescale Semiconductor
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MRF8S26120HR3
RF Power Field Effect Transistor - Motorola Semiconductors
MRF8S26120HR3
RF Power Field Effect Transistor - Motorola Semiconductors