KTC3571S 반도체 회로 부품 판매점
EPITAXIAL PLANAR NPN TRANSISTOR
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 KEC |
SEMICONDUCTOR
TECHNICAL DATA
FEATURE
Low Collector-Emitter Saturation Voltage VCE(sat).
High Collector Current Capability : IC and ICP.
Higher Efficiency Leading to Less Heat Generation.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation**
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
120 V
100 V
5V
1
A
3
300 mA
350 mW
150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted on 99.5% Alumina 10 8 0.6mm.
MARKING
Lot No.
KMBType Name
KTC3571Swww.DataSheet4U.com
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
23
1
PP
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage **
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation Voltage **
Base-Emitter Saturation Voltage **
Base-Emitter Voltag
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat) (1)
VCE(sat) (2)
VCE(sat) (3)
VBE(sat)
VBE
DC Current Gain **
Transition Frequency
hFE(1)
hFE(2)
hFE(3)
hFE(4)
fT
Collector Output Capacitance
Cob
** Pulse Width = 300 S, Duty Cycle 2%.
TEST CONDITION
IC=100 A
IC=1mA
IE=100 A
VCB=80V
VEB=4V, IC=0A
VCES=80V, VBE=0V
IC=100mA, IB=10mA
IC=500mA, IB=50mA
IC=1A, IB=100mA
IC=1A, IB=100mA
VCE=10V, IC=1A
VCE=10V, IC=1mA
VCE=10V, IC=250mA
VCE=10V, IC=500mA
VCE=10V, IC=1A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
2010. 2. 24
Revision No : 4
MIN.
120
100
5
-
-
-
-
-
-
-
-
150
150
100
80
100
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9.5
MAX.
-
-
-
100
100
100
0.04
0.12
0.2
1.05
0.9
-
500
-
-
-
-
UNIT
V
V
V
nA
nA
nA
V
V
V
MHz
pF
1/3
KTC3571S
www.DataSheet4U.com
1
IC/IB=10
VCE(sat) - I C
10-1
10-2
10-1
Ta=100 C
Ta=25 C
Ta=-55 C
1 10 102 103 104
COLLECTOR CURRENT IC (mA)
1.2 VCE=10V
VBE - I C
0.8 Ta=-55 C
Ta=25 C
0.4
Ta=100 C
0
10-1 1
10 102 103 104
COLLECTOR CURRENT I C (mA)
10 IC/IB=20
Ta=25 C
VBE(sat) - I C
1
10-1
10-1
1 10 102 103 104
COLLECTOR CURRENT I C (mA)
2010. 2. 24
Revision No : 4
10
IC/IB=50
Ta=25 C
1
VCE(sat) - I C
10-1
10-2
10-1
1 10 102 103 104
COLLECTOR CURRENT IC (mA)
600 VCE=10V
h FE - I C
Ta=100 C
400
Ta=25 C
200
Ta=-55 C
0
10-1 1
10 102 103 104
COLLECTOR CURRENT I C (mA)
I C - VCE
2
Ta=25 C
IB=3150µA IB=3500µA
IB=2800µA
1.6 IB=2450µA
1.2 IB=1400µA
0.8
IB=2100µA IB=1750µA
IB=1050µA
IB=700µA
IB=350µA
0.4
0
012345
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/3
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KTC3571S transistor
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