STBV42D 반도체 회로 부품 판매점
High voltage fast-switching NPN power transistor
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 ST Microelectronics |
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STBV42D
High voltage fast-switching NPN power transistor
Preliminary data
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed
■ Integrated free-wheeling diode
Application
■ Compact fluorescent lamps (CFLs)
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
TO-92
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STBV42D
Marking
BV42D
Package
TO-92
Packaging
BAG
March 2010
Doc ID 17236 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/8
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Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PTOT
TSTG
TJ
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Collector-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5 ms)
Base current
Base peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
RthJC Thermal resistance junction-case
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STBV42D
Value
700
400
9
1
2
0.5
1
1
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
°C
Value
125
Unit
°C/W
2/8 Doc ID 17236 Rev 1
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STBV42D transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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관련 데이터시트
STBV42
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - ST Microelectronics
STBV42D
High voltage fast-switching NPN power transistor - ST Microelectronics