BUJD103AD 반도체 회로 부품 판매점
NPN power transistor
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 NXP Semiconductors |
BUJD103AD
NPN power transistor with integrated diode
www.DataSheet4U.com
Rev. 02 — 6 October 2009
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic
package.
1.2 Features and benefits
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
IC collector current
Ptot total power
dissipation
VCESM collector-emitter
peak voltage
Static characteristics
hFE DC current gain
Conditions
see Figure 4Tmb ≤ 25 °C
VBE = 0 V
IC = 500 mA; VCE = 5 V;
see Figure 12Tj = 25 °C
VCE = 5 V; IC = 3 A;
Tmb = 25 °C; see Figure 12
Min Typ Max Unit
- - 4A
- - 80 W
- - 700 V
13 22 32
- 12.5 -
NXP Semiconductors
2. Pinning information
BUJD103AD
NPN power transistor with integrated diode
www.DataSheet4U.com
Table 2. Pinning information
Pin Symbol Description
1B
base
2C
collector
3E
emitter
Simplified outline
[1] mb
Graphic symbol
C
B
2
13
SOT428
(DPAK)
[1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
3. Ordering information
E
sym131
Table 3. Ordering information
Type number
Package
Name
Description
BUJD103AD
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads (one
lead cropped)
4. Limiting values
Version
SOT428
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCESM
collector-emitter peak VBE = 0 V
voltage
VCBO
VCEO
collector-base voltage
collector-emitter
voltage
IE = 0 A
IB = 0 A
IC collector current
ICM peak collector current see Figure 1, 2 and 3
IB base current
IBM peak base current
Ptot total power dissipation Tmb ≤ 25 °C; see Figure 4
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 700 V
- 700 V
- 400 V
- 4A
- 8A
- 2A
- 4A
- 80 W
-65 150 °C
- 150 °C
BUJD103AD_2
Product data sheet
Rev. 02 — 6 October 2009
© NXP B.V. 2009. All rights reserved.
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BUJD103AD transistor
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