KHB7D0N65F2 반도체 회로 부품 판매점
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
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 KEC |
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=650V, ID=7A
Drain-Source ON Resistance :
RDS(ON)=1.4 @VGS=10V
Qg(typ.)= 32nC
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CHARACTERISTIC
RATING
SYMBOL
KHB7D0N65F1 UNIT
KHB7D0N65P1
KHB7D0N65F2
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
650 V
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
ID
IDP
EAS
EAR
dv/dt
PD
Tj
Tstg
7 7*
4.2 4.2*
28 28*
212
1.6
4.5
160 52
1.28 0.42
150
-55 150
A
mJ
mJ
V/ns
W
W/
Thermal Resistance, Junction-to-Case RthJC
0.78
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
2.4 /W
- /W
62.5 /W
D
G
2007. 5. 10
S
Revision No : 0
KHB7D0N65P1/F1/F2
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KHB7D0N65P1
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KHB7D0N65F1
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
KHB7D0N65F2
AC
S
E
LL
M
DD
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.0 +_0.3
B 15.0+_ 0.3
C 2.70+_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_0.2
F 3.0+_0.3
G 12.0 +_0.3
H 0.5+0.1/-0.05
J 13.6 +_0.5
K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_0.1
P 6.8 +_0.1
Q 4.5+_ 0.2
R 2.6+_ 0.2
S 0.5 Typ
TO-220IS
1/7
KHB7D0N65P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
Static
CHARACTERISTIC
SYMBOL
TEST CONDITION
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=650V, VGS=0V,
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=3.75A
Total Gate Charge
www.DataSheet4U.com
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=520V, ID=7.0A
VGS=10V
(Note4,5)
VDD=325V
RL=46
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=7.0A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=7.0A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =8mH, IS=7.0A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 7.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
650 - - V
- 0.8 - V/
- - 10 A
2 - 4V
- - 100 nA
- 1.2 1.4
- 32 40
- 5.4 - nC
- 12.6 -
- 20 45
- 40 90
ns
- 125 260
- 80 170
- 1310 1700
-
113 147
pF
- 11.4 14.8
- -7
A
- - 28
- - 1.5 V
- 410 -
ns
-4-
C
2007. 5. 10
Revision No : 0
2/7
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( kec )
KHB7D0N65F2 transistor
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관련 데이터시트
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N-CHANNEL MOS FIELD EFFECT TRANSISTOR - KEC