AO4900 반도체 회로 부품 판매점
Dual N-Channel Enhancement Mode Field Effect Transistor
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 Alpha & Omega Semiconductors |
AO4900
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4900 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
www.DaetaffSichieeentc4yU.fcuormther. Standard Product AO4900 is Pb-
free (meets ROHS & Sony 259 specifications).
AO4900L is a Green Product ordering option.
AO4900 and AO4900L are electrically identical.
Features
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF=0.5V@1A
S2/A 1 8 D2/K
G2 2 7 D2/K
S1 3 6 D1
G1 4 5 D1
SOIC-8
D2
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain CurrentA
TA=25°C
TA=70°C
ID
Pulsed Drain CurrentB
IDM
Schottky reverse voltage
VKA
Continuous Forward CurrentA
TA=25°C
TA=70°C
IF
Pulsed Forward CurrentB
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
K
A
G1
MOSFET
30
±12
6.9
5.8
40
2
1.44
-55 to 150
D1
S1
Schottky
30
3
2
40
2
1.44
-55 to 150
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Typ
48
74
35
47.5
71
32
Max
62.5
110
40
62.5
110
40
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4900
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=6.0A
VGS=2.5V, ID=5A
Min
30
TJ=55°C
0.7
25
TJ=125°C
Typ Max Units
V
1
5
µA
100 nA
1 1.4 V
A
22.6
33
27
40
mΩ
27 32 mΩ
42 50 mΩ
www.DgaFtSaSheet4UF.ocrowmard Transconductance
VDS=5V, ID=5A
VSD Diode Forward Voltage
IS=1A
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery time
Qrr Body Diode Reverse Recovery charge
VGS=4.5V, VDS=15V, ID=6.9A
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
SCHOTTKY PARAMETERS
VF Forward Voltage Drop
Irm Maximum reverse leakage current
CT Junction Capacitance
IF=1.0A
VR=30V
VR=30V, TJ=125°C
VR=30V, TJ=150°C
VR=15V
12 16
0.71
1
3
S
V
A
846 1050
96
67
1.24 3.6
pF
pF
pF
Ω
9.6 12
1.65
3
3.2 4.8
4.1 6.2
26.3 40
3.7 5.5
15.5 20
7.9
nC
nC
nC
ns
ns
ns
ns
ns
nC
0.45 0.5
0.007 0.05
3.2 10
12 20
37
V
mA
pF
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
The SOA curve provides a single pulse rating.
Rev 3 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4900 transistor
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