STB432S 반도체 회로 부품 판매점
N-Channel Logic Enhancement Mode Field Effect Transistor
|
|
 SamHop Microelectronics |
www.DataSheet4U.com
STB/P432S
Sa mHop Microelectronics C orp.
N-Channel Logic Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
9 @ VGS=10V
40V 60A
11 @ VGS=4.5V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TC=25°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
40
±20
60
240
130
62.5
-55 to 150
2
50
Units
V
V
A
A
mJ
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jun,24,2008
www.samhop.com.tw
www.DataSheet4U.com
STB/P432S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
IDSS
Zero Gate Voltage Drain Current
VDS=32V , VGS=0V
IGSS Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
VGS=10V , ID=30A
VGS=4.5V , ID=28A
VDS=10V , ID=30A
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
VDS=15V,VGS=0V
f=1.0MHz
tD(ON)
tr
tD(OFF)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD=15V
ID=30A
VGS=10V
RGEN=3.3 ohm
Qg Total Gate Charge
VDS=15V,ID=30A,VGS=10V
VDS=15V,ID=28A,VGS=4.5V
Qgs Gate-Source Charge
VDS=15V,ID=30A,
Qgd Gate-Drain Charge
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS c
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage
VGS=0V,IS=30A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=1.25mH,RG=25Ω,VDD = 20V.(See Figure13)
Typ
1.7
7
9
26
1600
280
150
20
21
45
16
32
15
3.5
7.3
0.95
Max Units
1
±100
V
uA
nA
3V
9 m ohm
11 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
30 A
1.3 V
Jun,24,2008
2 www.samhop.com.tw
|
PDF 파일 내의 페이지 : 총 8 페이지
제조업체: SamHop Microelectronics
( samhop )
STB432S transistor
데이터시트 다운로드 :
[ STB432S.PDF ]
[ STB432S 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
