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Cystech Electonics |
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTPA92N3
Description
• High breakdown voltage. (BVCEO=-300V)
• Low collector output capacitance.
• Ideal for chroma circuit.
wSpwewc..DNaota. S:hCe3e0t48UN.c3o-Hm
Issued Date : 2003.06.27
Revised Date :
Page No. : 1/4
Symbol
BTPA92N3
Outline
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
Limits
-300
-300
-5
-500
225
556
150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
°C
BTPA92N3
CYStek Product Specification
CYStech Electronics Corp.
wSpwewc..DNaota. S:hCe3e0t48UN.c3o-Hm
Issued Date : 2003.06.27
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
-300
-300
-5
-
-
-
-
25
56
25
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.25
-0.1
-0.5
-0.9
-
270
-
-
6
Unit
V
V
V
µA
µA
V
V
-
-
-
MHz
pF
Test Conditions
IC=-100µA
IC=-1mA
IE=-100µA
VCB=-200V
VEB=-3V
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-20V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
Range
K
56~120
P
82~180
Q
120~270
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=10V
100
10
0.1
1 10
Collector Current---IC(mA)
100
Saturation Voltage vs Collector Current
10000
VCE(SAT)@IC=10IB
1000
100
10
0.1
1 10
Collector Current---IC(mA)
100
BTPA92N3
CYStek Product Specification
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