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Cystech Electonics |
CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
BTPA94A3
Description
• High breakdown voltage. (BVCEO=-400V)
• Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.
• Wide SOA (safe operation area).
• Complementary to BTNA44A3.
wSpwewc..DNaota. S:hCe3e0t49UA.c3om
Issued Date : 2003.06.30
Revised Date :
Page No. : 1/4
Symbol
BTPA94A3
Outline
TO-92
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
EBC
Limits
-400
-400
-6
-300
625
200
150
-55~+150
Unit
V
V
V
mA
mW
°C/W
°C
°C
BTPA94A3
CYStek Product Specification
CYStech Electronics Corp.
wSpwewc..DNaota. S:hCe3e0t49UA.c3om
Issued Date : 2003.06.30
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat)
hFE 1
*hFE 2
*hFE 3
*hFE 4
Cob
Min.
-400
-400
-6
-
-
-
-
-
-
-
50
56
50
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Classification Of hFE
Max.
-
-
-
-10
-10
-10
-0.2
-0.3
-0.6
-0.9
-
270
-
-
6
Unit Test Conditions
V IC=-50µA
V IC=-1mA
V IE=-50µA
µA VCB=-400V
µA VEB=-6V
µA VCB=-400V
V IC=-1mA, IB=-0.1mA
V IC=-10mA, IB=-1mA
V IC=-50mA, IB=-5mA
V IC=-20mA, IB=-2mA
- VCE=-10V, IC=-1mA
- VCE=-10V, IC=-10mA
- VCE=-10V, IC=-50mA
- VCE=-10V, IC=-100mA
pF VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Rank
Range
K
56~120
P
82~180
Q
120~270
BTPA94A3
CYStek Product Specification
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