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Cystech Electonics Corp |
CYStech Electronics Corp.
wSIspwseuwce.d.DNDaoa.tat:eSC:h62e50e10It534.U1.0c.0o5m
Revised Date :2009.02.04
Page No. : 1/5
High Speed Switching Transistor
BTC5103I3
Features
• Low VCE(sat), VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A
• High Switching Speed
• Wide SOA
• Complementary to BTA1952I3
• RoHS compliant package
BVCEO
IC
RCESAT
60V
5A
110mΩ
Symbol
BTC5103I3
Outline
TO-251
B:Base
C:Collector
E:Emitter
B CCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
VCBO
VCEO
VEBO
IC
ICP
Pd
100
60
6
5
9 *1
1
30 *2
Junction Temperature
Tj 150
Storage Temperature
Tstg -55~+150
Note : *1. Single Pulse Pw=100ms
*2. Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger
Unit
V
V
V
A
W
°C
°C
BTC5103I3
CYStek Product Specification
CYStech Electronics Corp.
wSIspwseuwce.d.DNDaoa.tat:eSC:h62e50e10It534.U1.0c.0o5m
Revised Date :2009.02.04
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Cob
Min.
100
60
6
-
-
-
-
82
30
-
-
Typ.
-
-
-
-
-
0.33
-
-
-
30
80
Max.
-
-
-
10
10
0.4
1.2
270
-
-
-
Unit
V
V
V
μA
μA
V
V
-
-
MHz
pF
Test Conditions
IC=1mA, IE=0
IC=1mA, IB=0
IE=1mA, IC=0
VCB=100V, IE=0
VEB=5V, IC=0
IC=3A, IB=0.3A
IC=3A, IB=0.3A
VCE=2V, IC=1A
VCE=2V, IC=3A
VCE=5V, IC=1A, f=30MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Ordering Information
Device
BTC5103I3
Package
TO-251
(RoHS compliant)
Shipping
80 pcs / tube, 50 tubes / box
Marking
C5103
BTC5103I3
CYStek Product Specification
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