BTC4505A3 반도체 회로 부품 판매점
High Voltage NPN Epitaxial Planar Transistor
|
|
 Cystech Electonics Corp |
CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC4505A3
Features
• High breakdown voltage. (BVCEO = 400V)
• Low saturation voltage, typically VCE(sat) = 0.1V at IC / IB=10mA / 1mA.
• Complementary to BTA1759A3
wSIspwseuwce.d.DNDaoa.tat:eSC:h22e10e00tA343.U1-.R0c.o15m
Revised Date :2004.04.02
Page No. : 1/4
Symbol
BTC4505A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
EBC
Limit
400
400
6
300
625
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTC4505A3
CYStek Product Specification
CYStech Electronics Corp.
wSIspwseuwce.d.DNDaoa.tat:eSC:h22e10e00tA343.U1-.R0c.1o5m
Revised Date :2004.04.02
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)
*VBE(sat)
hFE
fT
Cob
Min.
400
400
6
-
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
-
0.1
-
20
7
Max.
-
-
-
10
20
10
0.5
1.5
270
-
-
Unit
V
V
V
µA
nA
µA
V
V
-
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=400V, IE=0
VCE=300V, REB=4kΩ
VEB=6V,IC=0
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=10V, IC=10mA
VCE=10V, IC=10mA, f=10MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTC4505A3
CYStek Product Specification
|
PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Cystech Electonics Corp
( cystech )
BTC4505A3 transistor
데이터시트 다운로드 :
[ BTC4505A3.PDF ]
[ BTC4505A3 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
