IRH9250 반도체 회로 부품 판매점
TRANSISTOR P-CHANNEL
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Provisional Data Sheet No. PD-9.1392
www.DataSheet4U.com
AVALANCHE ENERGY AND dv/dt RATED
HEXFET® TRANSISTOR
IRH9250
P-CHANNEL
RAD HARD
-200 Volt, 0.315Ω, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 105 Rads (Si). Under identical pre- and post-
radiation test conditions, International Rectifier’s P-Channel
RAD HARD HEXFETs retainidentical electrical specifications
up to 1 x 105 Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 1012
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of
International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the P-
Channel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inver ters, choppers, audio
amplifiers and high-energy pulse circuits in space and
weapons environments.
Product Summary
Part Number
BVDSS
IRH9250
-200V
RDS(on)
0.315Ω
ID
-14A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
Absolute Maximum Ratings
Pre-Radiation
Parameter
IRH9250
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
-14
-9 A
-56
PD @ TC = 25°C
Max. Power Dissipation
150 W
Linear Derating Factor
1.2 W/K
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
±20
500
-14
V
mJ
A
EAR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.5 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.063 in. (1 .6mm) from case for 10s)
Weight
11.5 (typical)
g
Notes: See page 4
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IRH9250 Device
Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-200
—
—
—
-2.0
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
—— V
-0.10 — V/°C
Test Conditions
VGS = 0V, ID = -1.0 mA
Reference to 25°C, ID = -1.0 mA
— 0.315
— 0.33
— -4.0
——
— -25
— -250
— -100
— 100
— 200
— 45
— 85
— 60
— 240
— 225
— 175
8.7 —
8.7 —
1100
310
55
—
—
—
Ω
VGS = -12V, ID = -9A
VGS = -12V, ID = -14A
V VDS = VGS, ID = -1.0 mA
S( )
VDS > -15V, IDS = -9A
µA
VDS = 0.8 x Max. Rating,VGS = 0V
VDS = 0.8 x Max. Rating
VGS = 0V, TJ = 125°C
nA VGS = - 20V
VGS = 20V
VGS = -12V, ID = -14A
nC VDS = Max. Rating x 0.5
VDD = -50V, ID = -14A, RG = 2.35Ω
ns
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
nH center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = -25V
pF f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
IS
ISM
VSD
trr
QRR
ton
Parameter
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Test Conditions
— — -14
Modified MOSFET symbol
showing the integral Reverse
— — -56 A p-n junction rectifier.
— — -3.6 V
Tj = 25°C, IS = -14A, VGS = 0V
— — 740 ns Tj = 25°C, IF = -14A, di/dt ≤ -100 A/µs
— — 7.0 µC
VDD ≤ -14V
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min. Typ. Max. Units
— — 0.83
— — 30 K/W
— 0.12 —
Test Conditions
Typical socket mount
Notes: See page 4
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IRH9250 transistor
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