TPCP8102 반도체 회로 부품 판매점
Field Effect Transistor Silicon MOS Type
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 Toshiba Semiconductor |
TPCP8102
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOwSwwⅣ.D)ataSheet4U.com
TPCP8102
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 13.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 24 S (typ.)
• Low leakage current: IDSS = -10 μA (max) (VDS = -20 V)
• Enhancement model: Vth = -0.45 to -1.2 V
(VDS = -10 V, ID = -200 μA)
Absolute Maximum Ratings (Ta = 25°C)
0.33±0.05
0.05 M A
85
Unit: mm
0.475
1
0.65
2.9±0.1
4
S
0.025 S
0.17±0.02
B 0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
Characteristic
Symbol
Rating
Unit
1.12+-00..1123
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
-20
-20
± 12
-7.2
-28.8
1.68
0.84
33.7
-7.2
0.168
150
-55~150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
1. Source
2. Source
3. Source
4. Gate
1.12+-00..1123
0.28
+0.1
-0.11
5. Drain
6. Drain
7. Drain
8. Drain
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3V1K
Weight: 0.017 g (typ.)
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration
8765
Marking (Note 5)
8 76
5
1 2 34
8102
※
1 2 34
Lot No.
1 2006-11-17
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Symbol
Rth (ch-a)
Rth (ch-a)
Max Unit
74.4 °C/W
148.8 °C/W
TPCP8102
www.DataSheet4U.com
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a) (b)
Note 3: VDD = -16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = -7.2 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: • on the lower left of the marking indicates Pin 1.
* Weekly code (three digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
2 2006-11-17
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TPCP8102 transistor
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