MRF8S9260HR3 반도체 회로 부품 판매점
RF Power Field Effect Transistors
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 Freescale Semiconductor |
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
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on CCDF.
Frequency
Gps
(dB)
D Output PAR ACPR
(%)
(dB)
(dBc)
920 MHz
18.8 36.0
6.3 --39.5
940 MHz
18.7 37.0
6.2 --38.6
960 MHz
18.6 38.5
5.9 --37.1
Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW (1)
Output Power (3 dB Input
Enhanced Ruggedness
Overdrive
from
Rated
Pout),
Designed
for
Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF8S9260H
Rev. 1, 2/2012
MRF8S9260HR3
MRF8S9260HSR3
920--960 MHz, 75 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465B--04
NI--880
MRF8S9260HR3
CASE 465C--03
NI--880S
MRF8S9260HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (2,3)
CW Operation @ TC = 25C
Derate above 25C
VDSS
VGS
VDD
Tstg
TC
TJ
CW
--0.5, +70
--6.0, +10
32, +0
--65 to +150
150
225
280
1.5
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 75 W CW, 28 Vdc, IDQ = 1800 mA
Case Temperature 80C, 265 W CW, 28 Vdc, IDQ = 1100 mA
RJC
0.37
0.31
C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2009, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S9260HR3 MRF8S9260HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10 Adc
IDSS
—
—
1 Adc
IGSS
—
—
1 Adc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 Adc)
VGS(th)
1.5
2.3
3
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1700 mAdc, Measured in Functional Test)
VGS(Q)
2.4
3.1
3.9
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 4.4 Adc)
VDS(on)
0.1
0.2
0.3
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1700 mA, Pout = 75 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps 17.5 18.6 20.0
Drain Efficiency
D 36.0 38.5 —
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR 5.5 5.9
—
Vdc
Vdc
Vdc
dB
%
dB
Adjacent Channel Power Ratio
ACPR
—
--37.1
--35.0
dBc
Input Return Loss
IRL — --14 --9 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1700 mA, Pout = 75 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Frequency
Gps
(dB)
D
Output PAR
ACPR
(%) (dB) (dB)
IRL
(dB)
920 MHz
18.8 36.0 6.3 --39.5 --16
940 MHz
18.7 37.0 6.2 --38.6 --18
960 MHz
18.6 38.5 5.9 --37.1 --14
1. Part internally matched both on input and output.
(continued)
MRF8S9260HR3 MRF8S9260HSR3
2
RF Device Data
Freescale Semiconductor, Inc.
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MRF8S9260HR3 transistor
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