2SD2113 반도체 회로 부품 판매점
Power Transistor
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 Inchange Semiconductor |
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2113
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 1.5A
·High DC Current Gain
: hFE= 1000(Min) @ IC= 1.5A, VCE= 3V
APPLICATIONS
·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
120 V
wwwVEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
3A
ICM Collector Current-Peak
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ Junction Temperature
6A
25
W
2
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2113
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞
120
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 3mA
1.5 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB=B 30mA
VBE(sat)-1
VBE(sat)-2
ICBO
ICEO
hFE
Base-Emitter Saturation Voltage
i.cnBase-Emitter Saturation Voltage
.iscsemCollector Cutoff Current
wwwCollector Cutoff Current
IC= 1.5A; IB= 3mA
IC= 3A; IB=B 30mA
VCB= 100V; IE= 0
VCE= 100V; RBE= ∞
DC Current Gain
IC= 1.5A; VCE= 3V
1000
3.0 V
2.0 V
3.5 V
10 μA
10 μA
20000
isc Website：www.iscsemi.cn
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2SD2113 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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