MRF6S19120HR3 반도체 회로 부품 판매점
RF Power Field Effect Transistors
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 Freescale Semiconductor |
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
www.datasahpepeltic4au.tcioonms.
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1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15 dB
Drain Efficiency — 21.5%
ACPR @ 885 kHz Offset — - 54 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S19120H
Rev. 1, 5/2006
MRF6S19120HR3
MRF6S19120HSR3
1930 - 1990 MHz, 19 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19120HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19120HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
407
2.3
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +150
TC 150
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 120 W CW
Case Temperature 73°C, 19 W CW
RθJC
0.43
0.45
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19120HR3 MRF6S19120HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
www.datasheet4u.com
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1 μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 270 μAdc)
VGS(th)
1
2
3 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1000 mAdc)
VGS(Q)
2
2.8
4 Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.7 Adc)
VDS(on)
—
0.21
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2.7 Adc)
gfs — 6.9 — S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.95 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 19 W Avg. N - CDMA, f = 1990 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 14 15 17 dB
Drain Efficiency
ηD 20 21.5 — %
Adjacent Channel Power Ratio
ACPR
—
- 54 - 48 dBc
Input Return Loss
IRL — - 13 - 9 dB
1. Part is internally matched both on input and output.
MRF6S19120HR3 MRF6S19120HSR3
2
RF Device Data
Freescale Semiconductor
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MRF6S19120HR3 transistor
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