LET19060C 반도체 회로 부품 판매점
RF POWER TRANSISTORS Ldmos Enhanced Technology
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 STMicroelectronics |
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• IS-97 CDMA PERFORMANCES
POUT = 7.5 W
EFF. = 18 %
• EDGE PERFORMANCES
POUT = 30 W
EFF. = 25 %
• GSM PERFORMANCES
POUT = 65 W
EFF. = 45 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT/OUTPUT MATCHING
• ESD PROTECTION
DESCRIPTION
The LET19060C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The LET19060C is designed for high gain
and broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
LET19060C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
M265
epoxy sealed
ORDER CODE
LET19060C
BRANDING
LET19060C
PIN CONNECTION
1
2
3
1. Drain
2. Source
3. Gate
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70 °C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
Value
65
-0.5 to +15
7
130
200
-65 to +150
1.0
Unit
V
V
A
W
°C
°C
°C/W
January, 24 2003
1/4
LET19060C
ELECTRICAL SPECIFICATION (TCASE = 25 °C)
STATIC (Per Section)
Symbol
Test Conditions
V(BR)DSS VGS = 0 V ID = 10 µA
IDSS
VGS = 0 V VDS = 26 V
IGSS
VGS = 5 V VDS = 0 V
VGS(Q) VDS = 26 V ID = TBD
VDS(ON) VGS = 10 V ID = 2 A
GFS VDS = 10 V ID = 2 A
CISS*
VGS = 0 V VDS = 26 V f = 1 MHz
COSS*
VGS = 0 V VDS = 26 V f = 1 MHz
CRSS
VGS = 0 V VDS = 26 V f = 1 MHz
* Includes Internal Matching
Symbol
Test Conditions
DYNAMIC (f = 2000 MHz)
P1dB
ηD(1)
Load
mismatch
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD
VDD = 26 V IDQ = TBD POUT = 60 W
ALL PHASE ANGLES
DYNAMIC (f = 1930 - 1990 MHz)
P1dB
VDD = 26 V IDQ = TBD
GP VDD = 26 V IDQ = TBD POUT = 60 W
ηD(1)
VDD = 26 V IDQ = TBD
POUT(CDMA)(2)
885 KHz < -47 dBc
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
ηD(CDMA)(2)
885 KHz < -47 dBc
1.25 MHz < -55 dBc
2.25 MHz < -55 dBc
DYNAMIC (f = 1805 - 1880 MHz)
P1dB
VDD = 26 V IDQ = TBD
GP VDD = 26 V IDQ = TBD POUT = 60 W
ηD(1)
VDD = 26 V IDQ = TBD
POUT(EDGE)
400 KHz < -60 dBc
600 KHz < -70 dBc EVM < 3 %
ηD(EDGE)
400 KHz < -60 dBc
600 KHz < -70 dBc EVM < 3 %
(1) 1 dB Compression point (2) IS-97 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
2/4
Min.
65
2.5
Typ.
0.27
4.7
TBD
TBD
TBD
Max.
6
1
4.5
Unit
V
µA
µA
V
V
mho
pF
pF
pF
Min. Typ. Max. Unit
70 75
45 50
W
%
10:1 VSWR
60 65
11 13
40 45
7.5
18
W
dB
%
W
%
60 65
11 13
45
30
25
W
dB
%
W
%
Class
2
M3
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( stm )
LET19060C transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
