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SavantIC |
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
MJ21193
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·Complement to type MJ21194
·Excellent gain linearity
APPLICATIONS
·Designed for high power audio output,disk
head positioners and linear applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Open emitter
Open base
Open collector
ICM Collector current-peak
IB Base current
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
MAX
-400
-250
-5
-16
-30
-5
250
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
0.7
UNIT
/W
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
MJ21193
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-100mA ;IB=0
VCE(sat)-1 Collector-emitter saturation voltage IC=-8A; IB=-0.8A
VCE(sat)-2 Collector-emitter saturation voltage IC=-16A; IB=-3.2A
VBE(ON) Base-emitter on voltage
IC=-8A ; VCE=-5V
ICEX Collector cut-off current
VCE=-250V; VBE(off)=-1.5V
ICEO Collector cut-off current
VCE=-200V; IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-8A ; VCE=-5V
hFE-2
DC current gain
IC=-16A ; VCE=-5V
fT Transition frequency
IC=-1A ; VCE=-10V,f=1MHz
COB Collector output capacitance
Is/b
Second breakdown current
with base forward biased
f=1MHz;VCB=-10V,IE=0
VCE=-50V;t=1s(non-repetitive)
VCE=-80V;t=1s(non-repetitive)
MIN TYP. MAX UNIT
-250
V
-1.4 V
-4.0 V
-2.2 V
-100 µA
-100 µA
-100 µA
25 75
8
4 MHz
500 pF
-5.0
-2.5
A
2
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