BU941ZPFI 반도체 회로 부품 판매점
SILICON POWER TRANSISTOR
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 SavantIC |
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU941ZPFI
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPML package
·DARLINGTON
·High breakdown voltage
APPLICATIONS
·High ruggedness electronic ignitions
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
IBM Base current-peak
PT Total power dissipation
Tj Max.operating junction temperature
Tstg Storage temperature
CONDITIONS
Open base
Open collector
TC=25
VALUE
350
5
15
30
1
5
65
175
-65~175
UNIT
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-case Thermal resistance junction case
MAX
2.3
UNIT
/W
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACT ERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCL Clamping voltage
IC=0.1 A ;IB=0
VCE(sat-1) Collector-emitter saturation voltage IC=8A; IB=100m A
VCE(sat-2) Collector-emitter saturation voltage IC=10A; IB=250m A
VCE(sat-3) Collector-emitter saturation voltage IC=12A; IB=300m A
VBE(sat-1) Base-emitter saturation voltage
IC=8A; IB=100m A
VBE(sat-2) Base-emitter saturation voltage
IC=10A; IB=250m A
VBE(sat-3) Base-emitter saturation voltage
ICEO Collector cut-off current
IEBO Emitter cut-off current
IC=12A; IB=300m A
VCE=300V; IB=0
TC=125
VEB=5V; IC=0
hFE DC current gain
IC=5A ; VCE=10V
VF Diode forward voltage
IF=10A
Product Specification
BU941ZPFI
MIN TYP. MAX UNIT
350 500 V
1.8 V
1.8 V
2.0 V
2.2 V
2.5 V
2.7 V
0.1
0.5
mA
20 mA
300
2.5 V
2
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제조업체: SavantIC
( savantic )
BU941ZPFI transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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