2SB762 반도체 회로 부품 판매점
SILICON POWER TRANSISTOR
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 SavantIC |
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SD857/857A
·Low collector saturation voltage
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB762 2SB762A
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SB762
2SB762A
Open emitter
VCEO
Collector-emitter voltage
2SB762
2SB762A
Open base
VEBO
IC
ICM
PC
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Collectorl power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
VALUE
-60
-80
-60
-80
-5
-4
-8
40
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter
breakdown voltage
2SB762
2SB762A
IC=-30mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-4A;IB=-0.4 A
VBE Base-emitter on voltage
IC=-3A ; VCE=-4V
ICES
Collector
cut-off current
2SB762
VCE=-60V; VBE=0
2SB762A VCE=-80V; VBE=0
ICEO
Collector
cut-off current
2SB762 VCE=-30V; IB=0
2SB762A VCE=-60V; IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
hFE-2
DC current gain
IC=-3A ; VCE=-4V
Switching times
ton Turn-on time
toff Turn-off time
IC=-4A ; IB1=-IB2=-0.4 A
Product Specification
2SB762 2SB762A
MIN TYP. MAX UNIT
-60
V
-80
-1.5 V
-2.0 V
-400
µA
-700
µA
-7 mA
40 250
15
0.3 µs
1.3 µs
hFE-1 classifications
RQ
P
40-90
70-150 120-250
2
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PDF 파일 내의 페이지 : 총 3 페이지
제조업체: SavantIC
( savantic )
2SB762 transistor
데이터시트 다운로드 :
[ 2SB762.PDF ]
[ 2SB762 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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