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SavantIC |
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2N5741 2N5742
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·For general–purpose switching
and power amplifier applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5741
2N5742
VCEO
Collector-emitter voltage
2N5741
2N5742
VEBO
IC
PC
Tj
Tstg
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=100
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-60
-100
-60
-100
-5
-20
65
150
-65~200
UNIT
V
V
V
A
W
VALUE
0.875
UNIT
/W
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2N5741 2N5742
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5741
2N5742
IC=-0.2A ;IB=0
-60
-100
V
VCEsat-1 Collector-emitter saturation voltage IC=-10A; IB=-1A
-1.0 V
VCEsat-2 Collector-emitter saturation voltage IC=-20A ;IB=-4A
-3.0 V
VBEsat
Base-emitter saturation voltage
IC=-10A; IB=-1A
-1.8 V
VBE Base-emitter on voltage
IC=-10A ; VCE=-5V
-1.5 V
ICBO Collector cut-off current
ICEX Collector cut-off current
IEBO Emitter cut-off current
VCB=Rated VCBO; IE=0
VCE= Rated VCEO; VBE(off)=1.5V
TC=150
VEB=-5V; IC=0
-0.1 mA
-0.5
-5.0
mA
-1.0 mA
hFE-1
DC current gain
IC=-10A ; VCE=-5V
20 80
hFE-2
DC current gain
IC=-20A ; VCE=-5V
10
fT Transition frequency
IC=-1A ; VCE=-10V
10
MHz
2
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