2N5620 반도체 회로 부품 판매점
(2N5614 - 2N5620) Silicon NPN Power Transistors
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 SavantIC |
SavantIC Semiconductor
Product Specification
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors 2N5614 2N5616 2N5618 2N5620
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5614
VCBO
Collector-base voltage
2N5616/5618 Open emitter
2N5620
2N5614
VCEO
Collector-emitter voltage 2N5616/5618 Open base
2N5620
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
80
100
120
60
80
100
5
5
50
150
-65~150
UNIT
V
V
V
A
W
VALUE
1.5
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5614
2N5616/5618 IC=50mA ;IB=0
2N5620
60
80
100
V
VCEsat Collector-emitter saturation voltage
IC=1A; IB=0.1A
VBE Base-emitter on voltage
IC=2.5A ; VCE=5V
ICBO Collector cut-off current
VCB=Rated VCBO; IE=0
ICEO Collector cut-off current
VCE= Rated VCEO,IB=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
2N5614/5618
2N5616/5620
IC=2.5A ; VCE=5V
70
30
0.5 V
1.5 V
0.1 mA
1.0 mA
0.1 mA
200
90
2N5614/5618
fT Transition frequency
IC=0.5A ; VCE=10V
2N5616/5620
70
60
MHz
2
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제조업체: SavantIC
( savantic )
2N5620 transistor
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[ 2N5620.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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