2N5603 반도체 회로 부품 판매점
(2N5597 - 2N5603) Silicon PNP Power Transistors
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 SavantIC |
SavantIC Semiconductor
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Product Specification
2N5597 2N5599 2N5601 2N5603
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For high frequency power amplifier ;
audio power amplifier and drivers.
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5597
VCBO
Collector-base voltage
2N5599/5601 Open emitter
2N5603
2N5597
VCEO
Collector-emitter voltage 2N5599/5601 Open base
2N5603
VEBO
IC
PD
Tj
Tstg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-80
-100
-120
-60
-80
-100
-5
-2
20
150
-65~150
UNIT
V
V
V
A
W
VALUE
4.37
UNIT
/W
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2N5597 2N5599 2N5601 2N5603
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5597
2N5599/5601 IC=-50mA ;IB=0
2N5603
-60
-80
-100
V
VCEsat
VBE
ICBO
ICEO
IEBO
hFE
Collector-emitter saturation voltage IC=-1A; IB=-0.1A
Base-emitter on voltage
IC=-1A ; VCE=-5V
Collector cut-off current
VCB=Rated VCBO; IE=0
Collector cut-off current
VCE= Rated VCEO,IB=0
Emitter cut-off current
VEB=-5V; IC=0
DC current gain
2N5597/5601
2N5599/5603
IC=-1A ; VCE=-5V
70
30
-1.0 V
-1.5 V
-0.1 mA
-1.0 mA
-0.1 mA
200
90
2N5597/5601
fT Transition frequency
IC=-0.5A ; VCE=-10V
2N5599/5603
60
50
MHz
2
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제조업체: SavantIC
( savantic )
2N5603 transistor
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[ 2N5603.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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