MRF6V14300HSR3 반도체 회로 부품 판매점
RF Power Field Effect Transistors
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 Motorola Semiconductors |
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are
suitable for use in pulsed applications.
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout =
330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec,
Duty Cycle = 12%
Power Gain — 18 dB
Drain Efficiency — 60.5%
• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak
Power
www.DataSheet4UF.ecoamtures
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6V14300H
Rev. 2, 11/2008
MRF6V14300HR3
MRF6V14300HSR3
1400 MHz, 330 W, 50 V
PULSED
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6V14300HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6V14300HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +100
- 6.0, +10
- 65 to +150
150
200
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 65°C, 330 W Pulsed, 300 μsec Pulse Width, 12% Duty Cycle
RθJC
0.13
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V14300HR3 MRF6V14300HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 mA)
Zero Gate Voltage Drain Leakage Current
www.DataSheet4(UV.DcSom= 50 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 90 Vdc, VGS = 0 Vdc)
IGSS
—
—
10 μAdc
V(BR)DSS
100
—
— Vdc
IDSS
—
—
50 μAdc
IDSS
—
— 2.5 mA
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 662 μAdc)
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1.63 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
VGS(th)
0.9
1.6
2.4
Vdc
VGS(Q)
1.5
2.4
3
Vdc
VDS(on)
—
0.26
—
Vdc
Crss — 0.6 —
Coss — 350 —
Ciss — 330 —
pF
pF
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.), f = 1400 MHz,
Pulsed, 300 μsec Pulse Width, 12% Duty Cycle
Power Gain
Gps 16.5 18 19.5 dB
Drain Efficiency
ηD
59(2)
60.5(2)
—
%
Input Return Loss
IRL — - 12 - 9 dB
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak
(39.6 W Avg.), f1 = 1200 MHz, f2 = 1300 MHz and f3 = 1400 MHz, Pulsed, 300 μsec Pulse Width, 12% Duty Cycle, tr = 50 ns
Relative Insertion Phase
|ΔΦ| — 10 —
°
Gain Flatness
Pulse Amplitude Droop
Harmonic 2nd and 3rd
GF — 0.5 — dB
Drp — 0.3 — dB
H2 & H3
—
- 20
—
dBc
Spurious Response
— - 65 — dBc
Load Mismatch Stability
(VSWR = 3:1 at all Phase Angles)
VSWR - S
All Spurs Below - 60 dBc
Load Mismatch Tolerance
(VSWR = 5:1 at all Phase Angles)
VSWR - T
No Degradation in Output Power
1. Part internally matched both on input and output.
2.
Drain
efficiency
is
calculated
by:
hD
+
100
VDD
Pout
Ipeak
where: Ipeak = (IAVG - IDQ) / Duty Cycle (%) + IDQ.
MRF6V14300HR3 MRF6V14300HSR3
2
RF Device Data
Freescale Semiconductor
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MRF6V14300HSR3 transistor
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