AO4462 반도체 회로 부품 판매점
N-Channel Enhancement Mode Field Effect Transistor
|
|
 Alpha & Omega Semiconductors |
AO4462
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4462 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
www.DataSheet4aUp.pcolimcations. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
product AO4462 is Pb-free (meets ROHS & Sony
259 specifications). AO4462L is a Green Product
ordering option. AO4462 and AO4462L are
electrically identical.
Features
VDS (V) = 30V
ID = 11A
(VGS = 10V)
RDS(ON) < 16mΩ (VGS = 10V)
RDS(ON) < 26mΩ (VGS = 4.5V)
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
11
9
40
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4462
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
www.DataSheet4U.com
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=11A
VGS=4.5V, ID=10A
Forward Transconductance
VDS=5V, ID=11A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=11A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.35Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=11A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=100A/µs
Min
30
1
40
Typ Max Units
36
0.003
1.85
1
5
100
3
13.5 16
18.9 23.6
21 26
25
0.75 1
4.3
V
µA
nA
V
A
mΩ
mΩ
S
V
A
1040
180
110
0.7
1250
220
140
1.4
pF
pF
pF
Ω
19.8 24
9.8 12
2.5
3.5
4.5 6.5
3.9 5.5
17.4 25
3.2 5
17.5 21
9.3 12
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0: Apr. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
|
PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Alpha & Omega Semiconductors
( aos )
AO4462 transistor
데이터시트 다운로드 :
[ AO4462.PDF ]
[ AO4462 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
AO4462
N-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors
AO4464
N-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors
AO4466
N-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors
AO4468
30V N-Channel MOSFET - Alpha & Omega Semiconductors