MRF6V4300NBR1 반도체 회로 부품 판매점
RF Power Field Effect Transistors
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 Freescale Semiconductor |
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,
f = 450 MHz
Power Gain — 22 dB
Drain Efficiency — 60%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6V4300N
Rev. 3, 4/2010
MRF6V4300NR1
MRF6V4300NBR1
10--600 MHz, 300 W, 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6V4300NR1
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6V4300NBR1
PARTS ARE SINGLE--ENDED
RFin/VGS
RFin/VGS
RFout/VDS
RFout/VDS
Table 1. Maximum Ratings
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Gate--Source Voltage
VGS --6.0, +10
Storage Temperature Range
Tstg -- 65 to +150
Case Operating Temperature
TC 150
Operating Junction Temperature (1,2)
TJ 225
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Vdc
Vdc
°C
°C
°C
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
1
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 83°C, 300 W CW
Table 3. ESD Protection Characteristics
RθJC
0.24
°C/W
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3 260 °C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
10
Drain--Source Breakdown Voltage
(ID = 150 mA, VGS = 0 Vdc)
V(BR)DSS
110
—
—
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
50
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
2.5
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 800 μAdc)
VGS(th)
0.9
1.65
2.4
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 900 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.7
3.4
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.25
—
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 2.8 —
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 105 —
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss — 304 —
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 450 MHz, CW
Power Gain
Gps 20 22 24
Drain Efficiency
Input Return Loss
ηD 58 60 —
IRL — --16 --9
μAdc
Vdc
μAdc
mA
Vdc
Vdc
Vdc
pF
pF
pF
dB
%
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
MRF6V4300NR1 MRF6V4300NBR1
2
RF Device Data
Freescale Semiconductor
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MRF6V4300NBR1 transistor
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