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AUK |
Semiconductor
Description
• High frequency low noise amplifier application
• VHF band amplifier application
Features
• Low noise figure : NF = 4dB(Max.) at f=100MHz
www.DataShe•etH4Uig.cohmtransition frequency fT = 800MHz(Typ.)
Ordering Information
Type NO.
STS9018
Outline Dimensions
Marking
STS9018
4.5±0.1
STS9018
NPN Silicon Transistor
Package Code
TO-92
3.45±0.1
2.25±0.1
unit : mm
0.4±0.02
2.06±0.1
1.27 Typ.
2.54 Typ.
123
KST-9019-000
PIN Connections
1. Emitter
2. Base
3. Collector
1
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Emitter current
Collector dissipation
Junction temperature
www.DataSheSetto4Ura.cgoemtemperature range
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
Ratings
40
30
4
20
-20
625
150
-55~150
STS9018
Ta=25°C
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Transistor frequency
Noise figure
Power gain
ICBO
IEBO
hFE*
fT
NF
GPE
VCB=40V, IE=0
VEB=4V, IC=0
VCE=5V, IC=1mA
VCE=10V, IE=-8mA
VCB=6V,IE=-1mA, f=100MHz
* : hFE rank / F : 54~80, G : 70~108, H : 97~146, I : 132~198.
Min.
-
-
54
500
-
15
Typ.
-
-
-
800
-
-
Ta=25°C
Max. Unit
0.1 µA
0.1 µA
198 -
- MHz
4
dB
-
KST-9019-000
2
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