MRF947 반도체 회로 부품 판매점
High-Frequency Transistors
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 Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
Low Noise, High-Frequency
Transistors
Designed for use in high gain, low noise small–signal amplifiers. This series
features excellent broadband linearity and is offered in a variety of packages.
• Fully Implanted Base and Emitter Structure
• 9 Finger, 1.25 Micron Geometry with Gold Top Metal
• Gold Sintered Back Metal
• Available in tape and reel packaging options:
www.DataSheet4U.comT1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
Order this document
by MMBR941LT1/D
MMBR941
MRF947
MRF9411
SERIES
IC = 50 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR941LT1, T3, MMBR941BLT1
CASE 419–02, STYLE 3
MRF947AT1, MRF947BT1,
MRF947T1, T3
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF9411LT1
REV 9
© MMoOtorToOla,RInOc.L1A99R7 F DEVICE DATA
MMBR941 MRF947 MRF9411 SERIES
2–1
MAXIMUM RATINGS
Rating
Symbol MMBR941LT1, T3
MRF9411LT1
MRF947 Series
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) TC = 75°C
Derate linearly above Tcase = 75°C @
Collector Current — Continuous (2)
Maximum Junction Temperature
Storage Temperature
Thermal Resistance,
Junction to Case
VCEO
VCBO
VEBO
PDmax
IC
TJmax
Tstg
RθJC
10
20
1.5
0.25
3.33
50
150
– 55 to +150
300
10
20
1.5
0.25
3.33
50
150
– 55 to +150
300
10
20
1.5
0.188
2.5
50
150
– 55 to +150
400
Vdc
Vdc
Vdc
Watts
mW/°C
mA
°C
°C
°C/W
DEVICE MARKING
www.DataSheeMt4MUB.cRo9m41LT1 = 7Y
MRF9411LT1 = 10
MMBR941BLT1 = 7N
MRF947AT1 = G
MRF947T1, T3 = A
MRF947BT1 = H
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS (3)
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter Cutoff Current
(VEB = 1.0 V, IC = 0)
Collector Cutoff Current
(VCB = 10 V, IE = 0)
V(BR)CEO 10 12 — Vdc
All
V(BR)CBO 20 23 — Vdc
All
IEBO — — 0.1 µAdc
All
ICBO
—
— 0.1 µAdc
All
ON CHARACTERISTICS (3)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA) (MMBR941LT1, MRF9411LT1)
(MMBR941BLT1)
hFE —
50 — 200
100 — 200
DC Current Gain (VCE = 1.0 V, IC = 500 µA) MRF947T1, MRF947BT1
hFE1
50
—
—
—
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA)
MRF947T1, T3
MRF947AT1
MRF947BT1
—
hFE2 50 — —
hFE3 75 — 150
hFE4
100
—
200
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Ccb
— 0.35 —
pF
All
Current Gain — Bandwidth Product
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
fT — 8.0 — GHz
All
NOTE:
1. To calculate the junction temperature use TJ = PD x RθJC + TCASE. Case temperature measured on collector lead immediately adjacent to
body of package.
2. IC — Continuous (MTBF ≈ 10 years).
3. Pulse width ≤ 300 µs, duty cycle ≤ 2% pulsed.
MMBR941 MRF947 MRF9411 SERIES
2–2
MOTOROLA RF DEVICE DATA
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MRF947 transistor
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