CSD1133 반도체 회로 부품 판매점
(CSD1133 / CSD1134) PNP / NPN PLASTIC POWER TRANSISTORS
|
|
 CDIL |
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-220 Plastic Package
CSB857, CSB858
CSD1133, CSD1134
www.DataSheet4U.com
CSB857, 858 PNP PLASTIC POWER TRANSISTORS
CSD1133, 1134 NPN PLASTIC POWER TRANSISTORS
Low frequency Power Amplifier
BF
C
E
12 3
D
G
J
M
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
DIM MIN . MAX.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D 0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J 0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
O DEG 7
4
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 2 A; IB = 200 mA
D.C. current gain
IC = 1 A; VCE = 4 V
VCBO
VCEO
IC
Ptot
Tj
VCEsat
hFE
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
VCBO
VCEO
VEBO
857
1133
max. 70
max. 50
max.
max.
max.
858
1134
70 V
60 V
4.0 A
40 W
150 °C
max.
1.0 V
min.
max.
60
320
857
1133
max. 70
max. 50
max.
858
1134
70 V
60 V
5.0 V
Continental Device India Limited
Data Sheet
Page 1 of 3
www.DataSheet4U.com
CSB857, CSB858
CSD1133, CSD1134
Collector current
Collector current (Peak value)
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 50V
Breakdown voltages
IC = 50 mA; IB = 0
IC = 10 µA; IE = 0
IE = 10 µA; IC = 0
Saturation voltage
IC = 2 A; IB = 0.2 A
Base emitter on voltage
IC = 1 A; VCE = 4 V
D.C. current gain
IC = 0.1 A; VCE = 4 V
IC
max.
4.0 A
IC
max.
8.0 A
Ptot max.
40 W
Tj
max.
150 ºC
Tstg –65 to +150 ºC
ICBO
VCEO
VCBO
VEBO
VCEsat*
VBE(on)*
hFE*
857
1133
max.
min.
min.
min.
50
max.
max.
min.
858
1134
1.0 µA
60 V
70 V
5.0 V
1.0 V
1.0 V
35
IC = 1.0 A; VCE = 4 V**
Transition frequency
IC = 0.5 A; VCE = 4 V
PNP
NPN
hFE*
min.
max.
fT typ.
typ.
60
320
15 MHz
7.0 MHz
** hFE classification: B: 60-120 C: 100-200 D: 160-320
* Pulse test
Continental Device India Limited
Data Sheet
Page 2 of 3
|
PDF 파일 내의 페이지 : 총 3 페이지
제조업체: CDIL
( cdil )
CSD1133 transistor
데이터시트 다운로드 :
[ CSD1133.PDF ]
[ CSD1133 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
CSD1133
(CSD1133 / CSD1134) PNP / NPN PLASTIC POWER TRANSISTORS - CDIL
CSD1134
(CSD1133 / CSD1134) PNP / NPN PLASTIC POWER TRANSISTORS - CDIL