DP100 반도체 회로 부품 판매점
PNP Silicon Transistor
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 AUK |
www.DataSheet4U.com
Semiconductor
Features
• Extremely low collector-to-emitter saturation voltage
( VCE(SAT)= -0.25V Typ. @IC/IB=-400mA/-20mA)
• Suitable for low voltage large current drivers
• Complementary pair with DN100
• Switching Application
Ordering Information
Type NO.
DP100
Outline Dimensions
Marking
DP100
DP100
PNP Silicon Transistor
Package Code
TO-92
unit : mm
KST-9089-000
PIN Connections
1. Emitter
2. Collector
3. Base
1
www.DataSheet4U.com
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
-15
-12
-5
-1
625
150
-55~150
DP100
(Ta=25°C)
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Test Condition
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-12V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-1A
IC=-400mA, IB=-20mA
IC=-400mA, IB=-20mA
VCE=-5V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
-15 - - V
-12 - - V
-5 - - V
- - -0.1 μA
- - -0.1 μA
200 - 450 -
70 - - -
- - -0.3 V
- - -1.2 V
- 330 - MHz
-9
- pF
KST-9089-000
2
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DP100 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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