|
GTM |
www.DataSheet4U.com
GSMBT8050
NPN EPITAXIAL TRANSISTOR
Description
The GSMBT8050 is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2005/08/31
REVISED DATE :
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Ratings
+150
-55~+150
25
20
5
700
225
Unit
V
V
V
mA
mW
Electrical Characteristics(Ta = 25
Symbol
Min.
Typ.
BVCBO
25 -
BVCEO
20 -
BVEBO
5-
ICBO
--
IEBO
--
VCE(sat)
--
VBE(on)
--
hFE 120 -
fT 150 -
Cob - -
,unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=10uA, IE=0
- V IC=1mA, IB=0
- V IE=10uA, IC=0
1 uA VCB=30V, IE=0
100 nA VEB=5V, IC=0
500 mV IC=500mA, IB=50mA
1 V VCE=1V, IC=150mA
500 VCE=1V, IC=150mA
- MHz VCE=10V, IC=20mA, f=100MHz
10 pF VCB=10V, f=1MHz
Classification Of hFE
Rank
Range
D9C
120 ~ 200
D9D
150 ~ 300
D9E
250 ~ 500
GSMBT8050
Page: 1/2
Characteristics Curve
ISSUED DATE :2005/08/31
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSMBT8050
Page: 2/2
|