AO6409L 반도체 회로 부품 판매점
P-Channel Enhancement Mode Field Effect Transistor
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 Alpha & Omega Semiconductors |
Rev 2: Nov 2004
AO6409, AO6409L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6409 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
AO6409L ( Green Product ) is offered in a lead-free
package.
Features
VDS (V) = -20V
ID = -5 A
RDS(ON) < 45mΩ (VGS = -4.5V)
RDS(ON) < 56mΩ (VGS = -2.5V)
RDS(ON) < 75mΩ (VGS = -1.8V)
ESD Rating: 3000V HBM
www.DataSheet4U.com
TSOP6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-20
±8
-5.0
-4.2
-30
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
47.5
74
37
Max
62.5
110
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO6409, AO6409L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-16V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±4.5V
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-5A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-4A
VGS=-1.8V, ID=-2A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=-4.5V, VDS=-10V, ID=-5A
VGS=-4.5V, VDS=-10V, RL=2.0Ω,
RGEN=3Ω
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
Min
-20
-0.3
-25
8
Typ
-0.55
37
48
46
57
16
-0.78
1450
205
160
6.5
17.2
1.3
4.5
9
14
91
31
33
14
Max
-1
-5
±1
±10
-1
45
60
56
75
-1
-2.2
Units
V
µA
µA
µA
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO6409L transistor
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관련 데이터시트
AO6409
P-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors
AO6409L
P-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors