MSC81035M 반도체 회로 부품 판매점
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
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 STMicroelectronics |
MSC81035M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
∞:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 35 W MIN. WITH 10.7 dB GAIN
.280 2LFL (S068)
epoxy sealed
ORDER CODE
MSC81035M
B RA ND IN G
81035M
www.DataSheet4U.com
DESCRIPTION
The MSC81035M is a medium power Class C
transistor designed specifically for pulsed L-Band
avionics applications. This device is a direct re-
placement for the MSC1035M. MSC81035M of-
fers improved saturated ouput power and collec-
tor efficiency based on the test circuit described
herein.
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high reli-
ability and product consistency.
The MSC81035M is housed in the IMPAC™
package with internal input matching.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
PDISS
IC
VCC
TJ
TSTG
Power Dissipation* (TC ≤ 100°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Note: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
Junction Temperature at rated RF operating conditions.
Value
150
3.0
55
250
− 65 to +200
1.0
Unit
W
A
V
°C
°C
°C/W
September 2, 1994
1/4
MSC81035M
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCBO
BVEBO
BVCER
ICES
hFE
IC = 10 mA
IE = 1 mA
IC = 10 mA
VBE = 0 V
VCE = 5 V
IE = 0 mA
IC = 0 mA
RBE = 10 Ω
VCE = 50 V
IC = 500 mA
DYNAMIC
S ymb o l
Test Conditions
POUT
ηc
f = 1025 − 1150 MHz
f = 1025 − 1150 MHz
PG f = 1025 − 1150 MHz
N ot e:
Pulse Width = 10µSec
Duty Cycle = 1%
PIN = 3.0 W
PIN = 3.0 W
PIN = 3.0 W
VCC = 50 V
VCC = 50 V
VCC = 50 V
Min.
65
3.5
65
—
15
Va l u e
Typ. Max.
——
——
——
—5
— 120
Unit
V
V
V
mA
—
Value
Min. Typ. Max.
35 40 —
40 — —
10.7 11.2 —
Unit
W
%
dB
TYPICAL PERFORMANCE
TYPICAL BROADBAND POWER
AMPLIFIER
2/4
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MSC81035M transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
MSC81035M
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS - STMicroelectronics
MSC81035MP
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS - STMicroelectronics