MSC80914 반도체 회로 부품 판매점
NPN SILICON RF POWER TRANSISTOR
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 Advanced Semiconductor |
MSC80914
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC80914 is Designed for
Class C, Common Base General
Purpose Applications to 2.3 GHz.
FEATURES INCLUDE:
• Gold Metalization
• Site Emitter Ballasting
MAXIMUM RATINGS
IC 200 mA
VCC
Pwww.DataSheet4U.comDISS
TJ
TSTG
θJC
35 V
7.0 W @ TC = 25 OC
-55 OC to +200 OC
-55 OC to +200 OC
20 OC/W
PACKAGE STYLE .250 2L FLG
A
C
B
E
ØD
.060 x 45°
CHAMFER
G
L
HF
I
J
K
MNP
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .028 / 0.71
.032 / 0.81
B .740 / 18.80
C .245 / 6.22
.255 / 6.48
D .128 / 3.25
.132 / 3.35
E .125 / 3.18
F .110 / 2.79
.117 / 2.97
G .117 / 2.97
H .560 / 14.22
.570 / 14.48
I .790 / 20.07
.810 / 20.57
J .225 / 5.72
.235 / 5.97
K .165 / 4.19
.185 / 4.70
L .003 / 0.08
.007 / 0.18
M .058 / 1.47
.068 / 1.73
N .119 / 3.02
.135 / 3.43
P .149 / 3.78
.187 / 4.75
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCBO
IC = 1.0 mA
BVCER
IC = 5.0 mA
RBE = 10 Ω
BVEBO
IE = 1.0 mA
ICBO
VCB = 28 V
hFE
VCE = 5.0 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
45
45
3.5
0.5
15 150
UNITS
V
V
V
mA
---
Cob VCB = 28 V
f = 1.0 MHz
3.0 3.5 pF
Pout
PG
VCC = 28 V
Pin = 200 mW
ηC
fo = 2.0 GHz
1.0
7.0
35
1.25
8.0
40
W
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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PDF 파일 내의 페이지 : 총 1 페이지
제조업체: Advanced Semiconductor
( advanced )
MSC80914 transistor
데이터시트 다운로드 :
[ MSC80914.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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